IRG4PH40UD2-EPBF International Rectifier, IRG4PH40UD2-EPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH40UD2-EPBF
• Manufacturer: International Rectifier

Specifications of IRG4PH40UD2-EPBF

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics @ T
V
V
ΔV
V
V
ΔV
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
E
(BR)CES
(BR)ECS
CE(on)
GE(th)
FM
on
off
tot
TS
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ΔT
/ΔT
J
J
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Ã
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
18
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1950
1710
3660
6220
2100
0.43
2.43
2.97
2.47
100
100
200
220
380
130
250
210
180
-11
3.4
3.3
4.4
5.9
24
18
34
22
26
21
25
13
99
12
50
72
—
—
—
—
—
—
5000
4490
±100
250
150
140
300
110
200
380
3.1
6.0
3.8
3.7
7.0
8.8
24
50
76
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C V
A/μs
nC
nH
nC
μA
nA
pF
ns
μJ
ns
μJ
ns
V
V
V
S
V
A
V
V
V
V
V
V
I
I
V
I
V
V
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
f = 1.0MHz
T
T
T
T
T
T
T
T
I
I
I
F
F
C
C
C
J
J
J
J
J
J
J
J
C
C
C
J
GE
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
= 10A
= 10A, T
= 21A
= 21A, V
= 21A, V
= 150°C, See Fig. 9, 10, 11, 18
= 21A
= 41A
= 21A, T
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 0V
= 30V,
Conditions
= 15V
Conditions
GE
GE
, I
, I
C
C
C
CC
CC
See Fig.13
J
C
C
CE
CE
J
= 250μA
= 1.0A
= 1mA
= 150°C
G
G
C
= 250μA
= 250μA
= 150°C
= 800V
= 800V
See Fig
See Fig
See Fig
See Fig
= 1200V
= 1200V, T
= 10Ω
= 10Ω
= 21A
www.irf.com
See Fig.7
14
15
16
17
See Fig.8
V
See Fig.2, 5
di/dt = 200A/μs
J
GE
V
I
= 150°C
F
R
= 15V
= 8.0A
= 200V