IRG4BC20UD-STRRPBF International Rectifier, IRG4BC20UD-STRRPBF Datasheet
IRG4BC20UD-STRRPBF
Specifications of IRG4BC20UD-STRRPBF
Related parts for IRG4BC20UD-STRRPBF
IRG4BC20UD-STRRPBF Summary of contents
Page 1
... STG Soldering Temperature, for 10 sec. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC20UD-SPbF G TM ultrafast, N-channel 300 (0.063 in. (1.6mm) from case) Typ. 1.44 PD- 95565A UltraFast CoPack IGBT 600V CES V = 1.85V CE(on) typ ...
Page 2
... IRG4BC20UD-SPbF Electrical Characteristics @ T V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES ∆ Temperature Coeff. of Breakdown Voltage V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ––– GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...
Page 3
... Fig Typical Load Current vs. Frequency 100 T = 25° 20µs PULSE WIDTH 0.1 0 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com IRG4BC20UD-SPbF 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 100 T = 150° 15V 0 Fig Typical Transfer Characteristics A Duty cycle: 50 125° ...
Page 4
... IRG4BC20UD-SPbF 100 T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V V = 15V GE GE 80µs PULSE WIDTH 2.2 1 ...
Page 5
... V , Collector-to-Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector-to-Emitter Voltage 0. 480V 15V 25° 6.5A C 0.31 0.30 0. Gate Resistance ( Ω) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4BC20UD-SPbF SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. = 400V = 6.5A ...
Page 6
... IRG4BC20UD-SPbF 1 Ω 150° 480V 15V GE 0.9 0.6 0.3 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 100 0 150° 125° 25° 0.4 0.8 1.2 1.6 2.0 2.4 2 ...
Page 7
... Fig Typical Reverse Recovery vs. di 500 V = 200V 125° 25°C J 400 300 I = 16A F 200 I = 8.0A F 100 0 100 di /dt - (A/µs) f Fig Typical Stored Charge vs. di www.irf.com IRG4BC20UD-SPbF 100 I = 16A 8. 1000 100 Fig Typical Recovery Current vs. di /dt f 10000 V = 200V T = 125° 25°C 1000 I = 4.0A F 100 1000 ...
Page 8
... IRG4BC20UD-SPbF Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on D.U.T. 90% 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig ...
Page 9
... Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com IRG4BC20UD-SPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. VCC Figure 20. Pulsed Collector Current Test Circuit VCC ICM 480µF ...
Page 10
... IRG4BC20UD-SPbF 2 Dimensions are shown in millimeters (inches DIU@SI6UDPI6G S@8UD D@S GPBP 6TT@H7G` GPUÃ8P9@ 10 Q6SUÃIVH7@S $"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69 S@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com ...
Page 11
... CES GE ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG4BC20UD-SPbF 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 11 ...