IRG4PC50UD-E International Rectifier, IRG4PC50UD-E Datasheet
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IRG4PC50UD-E
Specifications of IRG4PC50UD-E
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IRG4PC50UD-E Summary of contents
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... Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com G TM ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD 91471B IRG4PC50UD UltraFast CoPack IGBT 600V CES V 1.65V CE(on) typ 15V 27A TO-247AC Max. Units 600 220 ...
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... IRG4PC50UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Freq uen cy (kH z) (Load Current = I of fundamental) RMS 0° Fig Typical Transfer Characteristics IRG4PC50UD ycl ° °C sin rive a s spe cifi -on lo sses inclu de effe cts o f reve rse re cov ery issipa tion = ° µ ...
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... IRG4PC50UD ase Tem perature (°C) C Fig Maximum Collector Current vs. Temperature Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 µ 2.0 1.5 1 -60 -40 - tio (°C ) Case Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ura tio ote www.irf.com ...
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... 2.5 2.0 1.5 1 Fig Typical Switching Losses vs. Gate Resistance www.irf.com Fig Typical Gate Charge vs 0 -60 -40 ) Fig Typical Switching Losses vs. IRG4PC50UD = 400V = 27A Total Gate Charge (nC) g Gate-to-Emitter Voltage I = 54A 27A 14A C = 5.0 = 15V = 480V - Junction Temperature (°C) J Junction Temperature ...
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... IRG4PC50UD 8 ° 6.0 4.0 2.0 0 lle c to r-to-E m itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ° ° ° 0.6 1.0 1.4 1.8 2 lta 125 ° TIN Collecto r-to-E m itter V oltage ( Fig Turn-Off SOA 2 ...
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... ° ° 50A 25A 10A /dt - (A/µs) f Fig Typical Reverse Recovery vs ° ° /µ Fig Typical Stored Charge vs. di www.irf.com Fig Typical Recovery Current vs ° ° /dt Fig Typical di f IRG4PC50UD ° ° /µ / /µs) f /dt vs. di /dt (rec / ...
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... IRG4PC50UD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d( d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - µ S ...
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... µ www.irf.com D.U. 480V IRG4PC50UD 480V @25° ...
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... IRG4PC50UD Q Repetitive rating 20V; pulse width limited by maximum junction temperature GE (figure 20 80%( 20V 10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot (. (. (. (. (. (. (. (. (. (. (. EDEC 47AC (T O -3P) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...