F4-25R12NS4 Infineon Technologies, F4-25R12NS4 Datasheet

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F4-25R12NS4

Manufacturer Part Number
F4-25R12NS4
Description
IGBT Modules IGBT-MODULES
Manufacturer
Infineon Technologies
Datasheet
1.F4-25R12NS4.pdf (8 pages)

Specifications of F4-25R12NS4

Configuration
Quad
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
45 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo 1
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
F4-25R12NS4
Manufacturer:
IR
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
F4-25R12NS4
Quantity:
130
Technische Information / technical information
IGBT-Module
IGBT-modules
EconoPACK™1 mit schnellem IGBT2 für hochfrequentes Schalten als H-Brückenkonfiguration
EconoPACK™1 module with fast IGBT2 for high switching frequency as H-bridge configuration
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
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F4-25R12NS4 Summary of contents

Page 1

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Page 2

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Page 6

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Page 7

... Technische Information / technical information IGBT-Module IGBT-modules Schaltplan / circuit diagram Gehäuseabmessungen / package outlines F4-25R12NS4 7 Vorläufige Daten preliminary data ...

Page 8

... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. F4-25R12NS4 8 Vorläufige Daten preliminary data ...

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