NE58219-T1-A California Eastern Labs, NE58219-T1-A Datasheet - Page 3

• Manufacturer Part Number: NE58219-T1-A
• Manufacturer: California Eastern Labs

Specifications of NE58219-T1-A

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 3V
• Collector Current (dc) (max): 60mA
• Dc Current Gain (min): 60
• Power Dissipation: 100mW
• Frequency (max): 5GHz
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Compliant

TYPICAL CHARACTERISTICS (T
150
100
50
24
16
30
20
10
0
0
8
0
V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
CE
V
T
0
= 5 V
BE
2
2 .
–
A
COLLECTOR CURRENT vs.
BASE TO EMITTER
C
– Ambient Temperature – °C
– Base to Emitter Voltage – V
o
e l l
50
t c
0.4
r o
4
o t
E
m
t t i
0.6
r e
6
100
V
o
a t l
A
e g
Free Air
= 25
0.8
8
–
20 A
V
°
C)
150
1
0 1
0 .
200
100
10
14
12
10
50
20
10
8
6
4
2
0
8
6
4
2
0
0.5
0.5
0.5
V
f = 1 GHz
CE
V
f = 1 GHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
CE
1
= 5 V
1
1
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
= 5 V
NE58219 / 2SC5004
COLLECTOR CURRENT
DC CURRENT GAIN vs.
I
I
I
C
C
C
2
2
2
– Collector Current – mA
– Collector Current – mA
– Collector Current – mA
5
5
5
10
10
10
V
CE
20
20
20
= 5 V
50
50
50
3