NE3210S01-T1B California Eastern Labs, NE3210S01-T1B Datasheet - Page 7
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NE3210S01-T1B
Manufacturer Part Number
NE3210S01-T1B
Description
Manufacturer
California Eastern Labs
Datasheet
1.NE3210S01-T1B.pdf
(7 pages)
Specifications of NE3210S01-T1B
Configuration
Single Dual Source
Gate-source Voltage (max)
3V
Drain Current (max)
70mA
Drain-source Volt (max)
4V
Operating Temperature (max)
125C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
4
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3210S01-T1B
Manufacturer:
RENESAS
Quantity:
41 000
Part Number:
NE3210S01-T1B
Manufacturer:
NEC
Quantity:
20 000
FET NONLINEAR MODEL PARAMETERS
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
NE3210S01 NONLINEAR MODEL
SCHEMATIC
(1) Series IV Libra TOM Model
Parameters
CGDO
DELTA1
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
DELTA
CGSO
DELTA2
CDS
RDB
CBS
VBR
VTO
TAU
VBI
RIS
RID
FC
IS
Q
N
0.014e-12
0.12e-12
0.36e-12
0.0952
-0.798
Infinity
1e-14
4e-12
0.072
0.065
5000
1e-9
Q1
2.5
0.5
0.6
0.3
0.6
0.5
0
8
1
0
0
GATE
Parameters
BETATCE
RGMET
VTOTC
TNOM
FFE
XTI
RG
RD
RS
EG
KF
AF
CGS_PKG
6 ohms
0.04pF
Rgx
1.43
Q1
0.5
27
8
3
0
0
1
3
0
0
1
CGD_PKG
0.001pF
0.72nH
Lgx
(1)
Q1
Rsx
0.06 ohms
0.1nH
Lsx
SOURCE
0.68nH
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
Ldx
time
capacitance
inductance
resistance
voltage
current
Parameter
6 ohms
Rdx
0.1 to 22.5 GHz
V
1/99
DS
= 1 V to 3 V, I
CDS_PKG
0.035PF
DRAIN
seconds
farads
henries
ohms
volts
amps
D
Units
= 5 mA to 30 mA
Updated: 9-13-06