U431 Vishay, U431 Datasheet - Page 2
![Transistor](/photos/22/17/221710/3758121_sml.gif)
U431
Manufacturer Part Number
U431
Description
Transistor
Manufacturer
Vishay
Specifications of U431
Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
7
Package Type
TO-78
Power Dissipation Pd
500mW
Continuous Drain Current Id
60mA
Gate-source Breakdown Voltage
-25V
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Transistor Polarity
N Channel
Current Rating
10mA
Gate-source Cutoff Voltage
-6V
Leaded Process Compatible
No
Rohs Compliant
No
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
U431
Manufacturer:
SI专营金封全系列
Quantity:
20 000
Part Number:
U4311B
Manufacturer:
TFK
Quantity:
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Part Number:
U4314B
Manufacturer:
TFK
Quantity:
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Part Number:
U4314B-AFPG3
Manufacturer:
TEMIC
Quantity:
20 000
U430/431
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
8-2
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
High Frequency
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Power-Match
Source Admittance
Matching
Differential
Gate-Source Voltage
Saturation Drain
Current Ratio
Transconductance Ratio
Gate-Source
Cutoff Voltage Ratio
Differential Gate Current
Common Mode Rejection Ratio
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
Assumes smaller value in the numerator.
Parameter
c
c
b
b
c
b
| V
| I
GS1
Symbol
V
V
_
G1
V
V
I
GS(off)1
GS(off)2
I
CMRR
V
(BR)GSS
DSS2
DSS1
g
g
–I
GS(off)
I
I
–V
C
C
DSS
GSS
GS(F)
g
g
g
g
g
I
e
fs1
fs2
G
os
iss
rss
os
G2
fs
fs
ig
n
GS2
|
|
V
V
V
DS
GS
DS
V
= 10 V, I
= –10 V, V
DG
= 10 V, I
V
V
V
V
I
V
V
V
V
Test Conditions
I
G
V
V
DS
DS
G
GS
DG
DS
DG
DS
DG
DS
DS
= 5 to 10 V, I
= 10 mA , V
= –1 mA, V
= 10 V, I
= 10 V, I
= –15 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
= 10 V, I
= 10 V, I
f = 100 MHz
= 10 V, I
f = 100 Hz
D
D
= 10 mA , f = 1 kHz
DS
= 10 mA, f = 1 kHz
D
D
= 0 V, f = 1 MHz
D
D
D
D
D
DS
GS
GS
= 10 mA
= 10 mA
DS
DS
= 10 mA
D
= 5 mA
= 5 mA
= 1 nA
= 1 nA
T
T
= 0 V
A
A
= 10 mA
= 0 V
= 0 V
= 0 V
= 0 V
= 150_C
= 150_C
Typ
0.13
0.95
0.95
0.95
–35
–10
–15
–10
100
0.8
4.5
–5
15
14
12
25
–2
75
2
6
b
Min
–25
0.9
0.9
0.9
–1
12
10
U430
Max
–150
–150
250
2.5
–4
30
1
5
1
1
1
Limits
S-04031—Rev. E, 04-Jun-01
Min
Document Number: 70249
–25
0.9
0.9
0.9
–2
24
10
U431
Max
–150
–150
250
2.5
–6
60
1
5
1
1
1
Unit
mA
mS
nV
mS
mV
pA
nA
pA
nA
mS
pA
dB
pF
V
V
V
Hz
NZBD