MMBF5434NL Fairchild Semiconductor, MMBF5434NL Datasheet
MMBF5434NL
Manufacturer Part Number
MMBF5434NL
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBF5434NL.pdf
(4 pages)
Specifications of MMBF5434NL
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
25V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant
©2003 Fairchild Semiconductor Corporation
N-Channel Switch
• This device is designed for digital switching
• Sourced from Process 58.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
I
T
Off Characteristics
V
I
V
I
On Characteristics
I
r
Small Signal Characteristics
C
C
GF
GSS
D
DSS
DS
applications where very low on resistance is
mandatory.
J
DG
GS
Symbol
(BR)GSS
GS
iss
rss
(off)
, T
(on)
Symbol
(off)
stg
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Drain Cutoff Voltag
Zero-Gate Voltage Drain Current *
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
A
=25 C unless otherwise noted
Parameter
T
A
MMBF5434
=25 C unless otherwise noted
I
V
V
V
V
V
V
V
G
GS
DS
DS
DS
DS
DS
DS
= -1.0 A, V
= 5.0V, I
= 5.0, V
= 15V, I
= 0, I
= 0, V
= 0, V
= -15V, V
D
GS
GS
= 10mA
Test Condition
GS
GS
D
= 10V, f = 1.0MHz
= 10V, f = 1.0MHz
DS
DS
= 3.0nA
= -10V
= 0
= 0
= 0
1. Drain 2. Source 3. Gate
3
-55 ~ +150
Value
-25
25
10
1
Min.
-1.0
-25
30
SuperSOT-3
Marking: 61Z
2
Max.
-4.0
200
200
10
30
15
Rev. A, February 2003
Units
mA
V
V
Units
C
mA
nA
pA
pF
pF
V
V
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MMBF5434NL Summary of contents
Page 1
... Zero-Gate Voltage Drain Current * DSS r (on) Drain-Source On Resistance DS Small Signal Characteristics C Input Capacitance iss C Reverse Transfer Capacitance rss * Pulse Test: Pulse Width 300 s, Duty Cycle ©2003 Fairchild Semiconductor Corporation MMBF5434 T =25 C unless otherwise noted A Parameter T =25 C unless otherwise noted A Test Condition ...
Page 2
... Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6” 1.6” 0.06" ©2003 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units 350 mW 2.8 mW/ C C/W 556 C/W ...
Page 3
... Package Dimensions ©2003 Fairchild Semiconductor Corporation SuperSOT-3 Dimensions in Millimeters Rev. A, February 2003 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...