FJZ594JCTFNL Fairchild Semiconductor, FJZ594JCTFNL Datasheet

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FJZ594JCTFNL

Manufacturer Part Number
FJZ594JCTFNL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJZ594JCTFNL

Channel Type
N
Configuration
Single
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant
©2003 Fairchild Semiconductor Corporation
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
Si N-channel Junction FET
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
I
DSS
V
I
I
P
T
T
BV
V
I
ly
C
C
R
G
D
DSS
Symbol
J
STG
GDO
D
GS
fs
ISS
RSS
θjA
Classification
GDO
l
Symbol
(off)
Symbol
I
Classification
DSS
(µA)
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Ambient
Parameter
150 ~ 240
T
B
C
T
Marking
=25°C unless otherwise noted
a
=25°C unless otherwise noted
T
Parameter
Parameter
a
=25°C unless otherwise noted
J 1 B
FJZ594J
V
V
V
V
V
I
G
DS
DS
DS
DS
DS
= -100uA
=5V, I
=5V, V
=5V, V
=5V, V
=5V, V
Test Condition
I
dss
D
GS
GS
GS
GS
=1µA
grade
=0, f=1MHz
=0
=0, f=1MHz
=0, f=1MHz
210 ~ 350
C
Min.
150
1. Drain 2. Source 3. Gate
-20
0.4
1250
Max
-55 ~ 150
3
Ratings
100
150
-20
10
1
Typ.
0.65
-0.6
1.2
3.5
1
Max.
-1.5
350
SOT-623F
Units
°C/W
2
Units
mW
mA
mA
°C
°C
V
Rev. D, July 2003
Units
mS
µA
pF
pF
V
V

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FJZ594JCTFNL Summary of contents

Page 1

... Input Capacitance ISS C Output Capacitance RSS Thermal Characteristics Symbol R Thermal Resistance, Junction to Ambient θjA I Classification DSS Classification I (µA) DSS ©2003 Fairchild Semiconductor Corporation FJZ594J T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Test Condition I = -100uA G V =5V, I =1µA DS ...

Page 2

... V [V], DRAIN-SOURCE VOLTAGE DS Figure 1. Static Characteristics 10 1 0.1 0.1 I [mA], DRAIN CURRENT DSS Figure 3. Forward Transfer Admittance 100 [V], DRAIN-SOURCE VOLTAGE DS Figure 5. Input Capacitance ©2003 Fairchild Semiconductor Corporation 300 250 200 150 100 Figure 2. Transfer Characteristic - ...

Page 3

... Typical Characteristics 140 120 100 C], AMBIENT TEMPERATURE Figure 7. Power Derating ©2003 Fairchild Semiconductor Corporation (Continued) 100 125 150 Rev. D, July 2003 ...

Page 4

... Package Dimensions ©2003 Fairchild Semiconductor Corporation SOT-623F Dimensions in Millimeters Rev. D, July 2003 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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