DSS60600MZ4-13 Diodes Zetex, DSS60600MZ4-13 Datasheet - Page 3
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DSS60600MZ4-13
Manufacturer Part Number
DSS60600MZ4-13
Description
Trans GP BJT PNP 60V 6A 4-Pin (3+Tab) SOT-223 T/R
Manufacturer
Diodes Zetex
Type
PNPr
Datasheet
1.DSS60600MZ4-13.pdf
(5 pages)
Specifications of DSS60600MZ4-13
Package
4SOT-223
Supplier Package
SOT-223
Pin Count
4
Minimum Dc Current Gain
150@0.5A@2V|120@1A@2V|100@2A@2V|70@6A@2V
Maximum Operating Frequency
100(Min) MHz
Maximum Dc Collector Current
6 A
Maximum Base Emitter Saturation Voltage
1@100mA@1A V
Maximum Collector Emitter Saturation Voltage
0.05@2mA@0.1A|0.07@100mA@1A|0.12@200mA@2A|0.25@60mA@3A|0.35@600mA@6A V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
6 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSS60600MZ4-13
Manufacturer:
DIODES/美台
Quantity:
20 000
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
0.001
1.2
0.8
0.6
0.4
0.2
1.0
0.01
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0
1
1
T = 85°C
0
T = 150°C
1
T = 25°C
A
A
T = -55°C
A
Fig. 5 Typical Collector-Emitter Saturation Voltage
Fig. 7 Typical Base-Emitter Saturation Voltage
A
-V , COLLECTOR-EMITTER VOLTAGE (V)
I /I = 10
C B
CE
I
C B
-I , COLLECTOR CURRENT (mA)
10
/I
C
10
-I , COLLECTOR CURRENT (mA)
4
= 10
Fig. 3 Typical Collector Current
C
vs. Collector-Emitter Voltage
vs. Collector Current
vs. Collector Current
100
100
8
T = 85°C
A
T = 150°C
A
1,000
I = -5mA
I = -3mA
I = -2mA
I = -1mA
I = -4mA
B
B
B
B
B
1,000
12
T = -55°C
A
10,000
10,000 100,000
T = 25°C
A
16
100,000
20
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3 of 5
1,000
1,000
100
100
10
1.2
1.0
0.8
0.6
0.4
0.2
10
0
Fig. 4 Typical DC Current Gain vs. Collector Current
1
0.1
1
V
T = 85°C
T = 25°C
T = -55°C
T = 150°C
A
CE
A
A
A
Fig. 6 Typical Base-Emitter Turn-On Voltage
Fig. 8 Typical Capacitance Characteristics
= -2V
-I , COLLECTOR CURRENT (mA)
10
-I , COLLECTOR CURRENT (mA)
C
C
T = 150°C
T = 25°C
T = -55°C
10
V , REVERSE VOLTAGE (V)
A
T = 85°C
A
A
R
A
vs. Collector Current
1
100
C
ibo
100
1,000
10
V
DSS60600MZ4
CE
1,000
10,000 100,000
C
= -2V
obo
f = 1MHz
© Diodes Incorporated
December 2008
10,000
100