IRL6372TRPBF International Rectifier, IRL6372TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRL6372TRPBF
• Description: DUAL N CH HEXFET POWER MOSFET, 30V, 8.1A, SOIC-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL6372TRPBF

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.014ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Resistance Drain-source Rds (on): 17.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
250
200
150
100
Fig 12. On-Resistance vs. Gate Voltage
50
40
35
30
25
20
15
10

0
5
25
‚
1
+
-
Starting T J , Junction Temperature (°C)
2
V GS, Gate -to -Source Voltage (V)
D.U.T
3
50
4
5
ƒ
75
+
-
•
•
•
•
Fig 16.
SD
6
T J = 125°C
T J = 25°C
7
•
•
•
100
TOP
BOTTOM 6.5A
8
9
-
G
I D = 8.1A
125
„
10 11 12
I D
1.2A
1.8A
HEXFET
+
150
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
25000
20000
15000
10000
5000
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 13. Typical On-Resistance vs. Drain Current
70
60
50
40
30
20
10
0
1E-8
P.W.
SD
DS
0
Waveform
Waveform
Fig 15. Typical Power vs. Time
Ripple ≤ 5%
Body Diode
Period
for N-Channel
10
1E-7
Body Diode Forward
Diode Recovery
Current
I D , Drain Current (A)
20
dv/dt
Forward Drop
1E-6
Time (sec)
di/dt
Vgs = 2.5V
30
IRL6372PbF
D =
1E-5
Period
P.W.
40
Vgs = 4.5V
1E-4
50
V
V
I
SD
GS
DD
=10V
1E-3
60
5