MT45W4MW16BFB-706 WT F Micron Technology Inc, MT45W4MW16BFB-706 WT F Datasheet - Page 40
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MT45W4MW16BFB-706 WT F
Manufacturer Part Number
MT45W4MW16BFB-706 WT F
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BBB-706_WT_TR.pdf
(61 pages)
Specifications of MT45W4MW16BFB-706 WT F
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Not Compliant
Figure 29:
Table 21:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
t
t
AA
APA
BA
BHZ
BLZ
CEM
CEW
CO
Asynchronous READ Timing Parameters – Page Mode Operation
Page Mode READ
Min
10
1
-70x
DQ[15:0]
Max
LB#/UB#
7.5
70
20
70
70
A[21:4]
8
8
A[3:0]
ADV#
WAIT
WE#
OE#
CE#
Min
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
10
IH
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
IL
OL
IL
1
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
-856
High-Z
Max
7.5
85
25
85
85
8
8
High-Z
t
CEW
VALID ADDRESS
t LZ
t BLZ
t CO
Units
t AA
t BA
t OLZ
ns
ns
ns
ns
ns
µs
ns
ns
t OE
VALID ADDRESS
40
OUTPUT
VALID
t APA
t RC
Symbol
t
t
t
t
t
t
t
t
t CEM
ADDRESS
HZ
LZ
OE
OH
OHZ
OLZ
PC
RC
VALID
t OH
t PC
OUTPUT
VALID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ADDRESS
VALID
DON’T CARE
OUTPUT
VALID
ADDRESS
VALID
Min
t HZ
10
20
70
5
5
-70x
OUTPUT
VALID
t HZ
t OHZ
t BHZ
UNDEFINED
Max
20
8
8
High-Z
©2003 Micron Technology, Inc. All rights reserved.
Min
Timing Diagrams
10
25
85
5
5
-856
Max
20
8
8
Units
ns
ns
ns
ns
ns
ns
ns
ns