MT49H8M36HU-33 Micron Technology Inc, MT49H8M36HU-33 Datasheet - Page 45

• Manufacturer Part Number: MT49H8M36HU-33
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H8M36HU-33

• Organization: 8Mx36
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 300MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 790mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Figure 20:
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
COMMAND
ADDRESS
DK#
CK#
DM
DQ
CK
DK
Bank a,
WRITE
Add n
Consecutive WRITE-to-WRITE
T0
Notes:
NOP
t
T1
RC = 4
1. DI an (or bn) = data-in for bank a (or b) and address n.
2. Three subsequent elements of the burst are applied following DI for each bank.
3. BL = 4.
4. Each WRITE command may be to any bank; if the second WRITE is to the same bank,
5. Nominal conditions are assumed for specifications not defined.
WL = 5
t
RC must be met.
288Mb: x9, x18, x36 2.5V V
Bank b,
Add n
WRITE
WL = 5
NOP
T3
Bank a,
WRITE
Add n
T4
44
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
an
DI
NOP
EXT
T5n
, 1.8V V
T6
NOP
T6n
DD
, HSTL, CIO, RLDRAM II
TRANSITIONING DATA
bn
T7
DI
NOP
©2003 Micron Technology, Inc. All rights reserved.
T7n
T8
NOP
Operations
T8n
DON’T CARE
T9
an
NOP
DI