M27C1024-35C1 STMicroelectronics, M27C1024-35C1 Datasheet - Page 6

• Manufacturer Part Number: M27C1024-35C1
• Manufacturer: STMicroelectronics

Specifications of M27C1024-35C1

• Density: 1Mb
• Organization: 64Kx16
• Interface Type: Parallel
• Bus Type: Parallel
• In System Programmable: External
• Access Time (max): 35ns
• Package Type: PLCC
• Reprogramming Technique: OTP
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Supply Current: 50mA
• Pin Count: 44
• Mounting: Surface Mount
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

M27C1024
Table 9. Read Mode AC Characteristics
(T
Note: 1. V
Figure 7. Read Mode AC Waveforms
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, I
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device at the
output. The associated transient voltage peaks
can be suppressed by complying with the two line
6/16
t
t
Symbol
A
EHQZ
GHQZ
t
t
t
t
GLQV
AXQX
AVQV
ELQV
= 0 to 70 C, –40 to 85 C; –40 to 105 C or –40 to 125 C; V
2. Sampled only, not 100% tested.
(2)
(2)
CC
Q0-Q15
A0-A15
E
G
must be applied simultaneously with or before V
t
Alt
ACC
t
t
t
t
t
OE
OH
CE
DF
DF
Address Valid to Output Valid
Chip Enable Low to Output Valid
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Address Transition to Output
Transition
Parameter
CC
, has three seg-
tAVQV
tELQV
tGLQV
VALID
(1)
PP
and removed simultaneously or after V
Test Condition
E = V
E = V
G = V
E = V
G = V
E = V
IL
IL
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1 F ceram-
ic capacitor be used on every device between V
and V
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7 F bulk electrolytic capacitor should be
used between V
es. The bulk capacitor should be located near the
power supply connection point.The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
, G = V
, G = V
IL
IL
IL
IL
SS
IL
IL
. This should be a high frequency capaci-
CC
Min
tAXQX
0
0
0
= 5V
-70
CC
Max
70
70
35
30
30
tGHQZ
tEHQZ
VALID
and V
5% or 5V
M27C1024
Min
0
0
0
PP
-80/-90
.
SS
Max
for every eight devic-
80
80
40
30
30
10%; V
Min
AI00705B
0
0
0
-10/-12
-15/-20
Hi-Z
Max
100
100
PP
50
30
30
= V
Unit
ns
ns
ns
ns
ns
ns
CC
CC
)