OPB819 Optek Technology (TT electronics), OPB819 Datasheet
OPB819
Manufacturer Part Number
OPB819
Description
Manufacturer
Optek Technology (TT electronics)
Type
Transmissiver
Datasheet
1.OPB819.pdf
(2 pages)
Specifications of OPB819
Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
2V
Collector-emitter Voltage
30V
Forward Current
50mA
Power Dissipation
100mW
Pin Count
4
Mounting
Screw
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Prod uct Bul le tin OPB819
No vem ber 2000
Slotted Op ti cal Switch
Type OPB819
Fea tures
De scrip tion
The OPB819 consists of an infrared
emitting diode and NPN silicon
phototransistor mounted in a plastic
houising on opposite sides of a 1.25”
(31.75 mm) wide slot. Phototransistor
switching takes place whenever an
opaque object passes through the slot.
Custom electrical, wire or cabling is
available.
Contact your local representative or
Optek for more information.
Visit our website at www.optekinc.com
or email us at sensors@optekinc.com
Op tek Tech nol ogy, Inc.
Non-contact switching
24” wire leads
1.25” (32 mm) wide slot
1.38” (35 mm) deep slot
1215 W. Crosby Road
Ab so lute Maxi mum Rat ings (T
Stor age and Operating Tem per a ture Range . . . . . . . . . . . . . . . . . . . . -40 C to +80 C
Input Di ode
Con tin u ous For ward Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur rent (1 s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Out put Photosensor
Col lec tor-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
NOTES:
(1) Derate linearly 1.67 mW/ C above 25 C.
(2) All parameters tested using pulse technique.
Pre cau tions: Ex po sure of the plas tic body to chlo ri nated hy dro car bons and ke tones such as
thread lock and in stant ad he sive prod ucts will de grade the plas tic body. Cleaning agents
meth a nol and isopropanol are rec om mended. Spray or wipe do not sub merge.
Car roll ton, Texas 75006
A
= 25
(972) 323- 2200
o
C un less oth er wise noted)
Fax (972) 323- 2396
(1)
(1)
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OPB819 Summary of contents
Page 1
... Prod uct Bul le tin OPB819 No vem ber 2000 Slotted Op ti cal Switch Type OPB819 Fea tures Non-contact switching 24” wire leads 1.25” (32 mm) wide slot 1.38” (35 mm) deep slot De scrip tion The OPB819 consists of an infrared emitting diode and NPN silicon phototransistor mounted in a plastic houising on opposite sides of a 1.25” ...
Page 2
... Type OPB819 Electrical Characteristics ( unless otherwise noted) A SYM BOL PA RAME TER In put Diode V Forward Voltage F I Reverse Current R Out put Phototransistor V Collector-Emitter Breakdown Voltage (BR)CEO V Emitter-Collector Breakdown Voltage (BR)ECO I Collector-Emitter Dark Current CEO Cou pled V Collector-Emitter Saturation Voltage CE(SAT) I On-State Collector Current C(ON) Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble ...