TSEV83102G0BGL E2V, TSEV83102G0BGL Datasheet - Page 13

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TSEV83102G0BGL

Manufacturer Part Number
TSEV83102G0BGL
Description
Manufacturer
E2V
Datasheet

Specifications of TSEV83102G0BGL

Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSEV83102G0BGL
Manufacturer:
E2V
Quantity:
20 000
Table 2. Digital Coding
2101D–BDC–06/04
Differential
Analog Input
> 250.25 mV
250.25 mV
249.75 mV
125.25 mV
124.75 mV
-0.25 mV
-124.75 mV
-124.25 mV
-249.75 mV
-250.25 mV
< -250.25 mV
0.25 mV
Voltage Level
>Top end of full-scale + ½ LSB
Top end of full-scale + ½ LSB
Top end of full-scale - ½ LSB
3/4 full-scale + ½ LSB
3/4 full-scale - ½ LSB
Mid-scale + ½ LSB
Mid-scale - ½ LSB
1/4 full-scale + ½ LSB
1/4 full-scale - ½ LSB
Bottom end of full-scale + ½ LSB
Bottom end of full-scale - ½ LSB
< Bottom end of full-scale - ½ LSB
Table 3. Die Mechanical Information
Description
Die size
Pad size
- single pad
- double pad
Die thickness
Back side metallization
Metallization
- number of layers
- material
Pad metallization
Passivation
Back side potential
MSB………....LSB Out-of-Range
1 1 1 1 1 1 1 1 1 1
1 1 1 1 1 1 1 1 1 1
1 1 1 1 1 1 1 1 1 0
1 1 0 0 0 0 0 0 0 0
1 0 1 1 1 1 1 1 1 1
1 0 0 0 0 0 0 0 0 0
0 1 1 1 1 1 1 1 1 1
0 1 0 0 0 0 0 0 0 0
0 0 1 1 1 1 1 1 1 1
0 0 0 0 0 0 0 0 0 1
0 0 0 0 0 0 0 0 0 0
0 0 0 0 0 0 0 0 0 0
Binary (B/GB = GND or floating)
1
0
0
0
0
0
0
0
0
0
0
1
Data
3740 µm x 3820 µm (±15 µm)
90 µm x 90 µm
180 µm x 90 µm
380 µm ±25 µm
None
3
AlCu
AlCu
Oxyde nitride
-5V
Digital Output
MSB………....LSB
1 0 0 0 0 0 0 0 0 0
1 0 0 0 0 0 0 0 0 0
1 0 0 0 0 0 0 0 0 1
1 0 1 0 0 0 0 0 0 0
1 1 1 0 0 0 0 0 0 0
1 1 0 0 0 0 0 0 0 0
0 1 0 0 0 0 0 0 0 0
0 1 1 0 0 0 0 0 0 0
0 0 1 0 0 0 0 0 0 0
0 0 0 0 0 0 0 0 0 1
0 0 0 0 0 0 0 0 0 0
0 0 0 0 0 0 0 0 0 0
GRAY (B/GB = V
TS83102G0B
Out-of-Range
EE
1
0
0
0
0
0
0
0
0
0
0
1
)
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