ICS83026BGI-01T IDT, Integrated Device Technology Inc, ICS83026BGI-01T Datasheet - Page 3
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ICS83026BGI-01T
Manufacturer Part Number
ICS83026BGI-01T
Description
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet
1.ICS83026BGI-01T.pdf
(15 pages)
Specifications of ICS83026BGI-01T
Lead Free Status / RoHS Status
Not Compliant
A
T
83026BMI-01
T
T
I
I
S
V
V
V
V
I
I
S
I
I
N
"
S
V
V
V
V
V
V
ABLE
H I
L I
BSOLUTE
D
D
H I
L I
ABLE
ABLE
O
y
H I
L I
O
O
y
D
D
D
D
y
H I
L I
O
O
O
Supply Voltage, V
Inputs, V
Outputs, V
Package Thermal Impedance,
8 Lead SOIC
8 Lead TSSOP
Storage Temperature, T
O
u
H
L
D
D
H
L
m
m
m
T
O
p t
E
b
b
b
t u
3C. LVCMOS / LVTTL DC C
l o
3A. P
3B. LVCMOS / LVTTL DC C
l o
l o
: 1
L
O
o
M
P
P
P
P
n I
n I
n I
n I
I
O
O
P
n I
n I
n I
n I
O
O
O
O
a
u
a
o
o
d
a
AXIMUM
a
p t
O
OWER
u
u
p
p
p
p
u
u
p
p
p
p
u
u
s
w
a r
a r
a r
t u
t u
t u
t u
p t
p t
p t
p t
t u
t u
t u
t u
p t
p t
e T
u
i t i
r e
m
m
m
s t
t u
t u
t u
t u
t u
t u
e v
H
L
H
L
H
L
H
L
t s
t e
t e
S
t e
o
o
o
o
g i
g i
g i
g i
t
S
S
H
L
H
L
S
r e
w
w
DD
w
w
i C
S
u
r e
r e
o
u
u
r e
o
h
h
h
h
g i
g i
R
UPPLY
p
u
m
w
w
p
p
c r
V
C
V
C
p
h
h
V
C
p
V
C
ATINGS
p
p
l o
l o
n i
r u
y l
r u
u
l o
V
p
l o
V
r u
y l
y l
r u
V
V
" t i
a t
y l
a t
a
l o
l o
a t
e r
STG
a t
e r
l o
l o
C
e r
e r
e t
V
C
g
a t
g
a t
V
g
a t
DC C
r u
g
a t
d
t n
t n
l o
t n
r u
t n
e
e
d
e
l o
e
a i
g
g
g
g
a t
e r
e
e r
; e
i w
a t
g
e
; e
g
t n
a r
t n
g
h t
N
e
O
O
O
O
O
O
O
O
N
HARACTERISTICS
e
m
JA
O
O
E
E
E
E
E
E
E
E
5
. s
T
0
T
E
E
101.7°C/W (0 lfpm)
-0.5V to V
-0.5V to V
112.7°C/W (0 lfpm)
-65°C to 150°C
HARACTERISTICS
4.6V
HARACTERISTICS
1
o t
1
V
D
D
O
V
/
. 2
DD
D
DDO
V
V
,
D
T
+ 0.5 V
S
D
V
D
T
e
=
V
D
e
+ 0.5V
D
D
T
I
t s
DD
e
I
O
D
e
=
I
3
O
e
=
t s
V
V
I
D
H
O
L
O
4 .
,
,
IFFERENTIAL
= 3.3V ± 5%, V
t s
H
P
D
D
C
V
L
=
=
3
=
V
V
D
D
6
C
a
=
N I
o
=
4 .
O
O
DD
DD
C
V
1 -
a r
5
1
o
n
2 -
=
2
6
=
=
N I
, V
o
0
n
d
0
m
= 3.3V ± 5%, V
5
= 3.3V ± 5%, V
m
0
m
n
3
2
3
0
d
t i
=
, V
V
t e
µ
d
4 .
A
1 .
3 .
µ
t i
o i
A
A
N I
3
3
t i
A
r e
o i
V
6
3
7
4 .
n
o i
=
5
5
5
N I
n
s
6
M
V
V
V
n
s
0
=
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the DC Characteristics or AC Character-
istics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
5
s
e
V
V
0
a
DDO
V
s
-
u
TO
e r
= 1.71V
DDO
m
DDO
-LVCMOS/LVTTL F
e
n
= 2.375V
= 1.8V ± 5%, T
I t
V
M
V
M
f n
TO
D
D
i
D
i
r o
i n
1 -
D
O
0 -
i n
1 -
O
M
0 -
3.465V, T
2
1
2
-
m
m
5
2
3 .
m
6 .
-
5
8 .
i
3
3
2
3 .
0
0
i n
1
0
t a
u
0
1 .
1 .
3 .
TO
u
4 .
7 .
2 .
m
m
o i
m
7
3
3
5
1
3.465V, T
u
5
5
5
n
m
s
A
e
A
T
= -40°C
T
t c
= -40°C
y
y
T
o i
p
ICS83026I-01
p
y
, n
c i
c i
3
3
2
1
p
L
3 .
3 .
5 .
A
8 .
l a
c i
l a
= -40°C
OW
l a
TO
TO
M
M
85°C
V
V
ANOUT
85°C
S
M
a
a
D
D
D
D
0
i x
i x
a
0
0
0
0
3
3
2
KEW
4 .
1
TO
i x
+
5
+
5
REV. A AUGUST 4, 2010
4 .
4 .
6 .
8 .
5 .
8 .
2 .
m
m
1
8 .
3
5
m
0
0
0
6
6
2
85°C
u
u
9
3 .
3 .
5
5
5
u
m
m
, 1-
m
B
UFFER
U
U
U
TO
m
m
µ
µ
µ
µ
i n
i n
i n
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
s t
s t
s t
-2