NUF2116MNT1G ON Semiconductor, NUF2116MNT1G Datasheet - Page 2

• Manufacturer Part Number: NUF2116MNT1G
• Description: IC FILTER 2CH AUD EMI ESD DFN8
• Manufacturer: ON Semiconductor

Specifications of NUF2116MNT1G

• Resistance (ohms): 64
• Capacitance: 50pF
• Package / Case: 8-TDFN Exposed Pad
• Resistance In Ohms: 64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Tolerance: -
• Other names: NUF2116MNT1G; NUF2116MNT1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured at 25°C, V
2. 50 W source and 50 W load termination.
3. Total line capacitance is 2 times the diode capacitance (C
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ESD Discharge IEC61000−4−2
Steady−State Power per Resistor @ 25°C
Steady−State Power per Package @ 25°C
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s)
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Resistance
Capacitance per Diode (Notes 1, 3)
Cut−Off Frequency (Note 2)
Parameter
R
= 0 V, f = 1.0 MHz.
Parameter
(T
J
appreciable attenuation occurs
= 25°C unless otherwise noted)
Above this frequency,
Test Conditions
V
I
I
R
RWM
F
= 1.0 mA
= 40 mA
http://onsemi.com
= 12 V
d
).
2
Contact Discharge
Symbol
V
V
f
RWM
C
3dB
I
R
BR
R
d
13.7
Min
53
42
−
−
Symbol
T
V
T
P
P
T
OP
stg
PP
R
T
L
15.7
Typ
64
50
55
−
−
−55 to 150
−40 to 85
Value
180
360
260
30
Max
17.7
0.1
12
75
55
Unit
mW
mW
Unit
MHz
kV
°C
°C
°C
mA
pF
W
V
V