NUF2116MNT1G ON Semiconductor, NUF2116MNT1G Datasheet - Page 2
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NUF2116MNT1G
Manufacturer Part Number
NUF2116MNT1G
Description
IC FILTER 2CH AUD EMI ESD DFN8
Manufacturer
ON Semiconductor
Datasheet
1.NUF2116MNT1G.pdf
(4 pages)
Specifications of NUF2116MNT1G
Resistance (ohms)
64
Capacitance
50pF
Package / Case
8-TDFN Exposed Pad
Resistance In Ohms
64
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Tolerance
-
Other names
NUF2116MNT1G
NUF2116MNT1GOSTR
NUF2116MNT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NUF2116MNT1G
Manufacturer:
ORICEL
Quantity:
5 086
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured at 25°C, V
2. 50 W source and 50 W load termination.
3. Total line capacitance is 2 times the diode capacitance (C
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ESD Discharge IEC61000−4−2
Steady−State Power per Resistor @ 25°C
Steady−State Power per Package @ 25°C
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s)
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Resistance
Capacitance per Diode (Notes 1, 3)
Cut−Off Frequency (Note 2)
Parameter
R
= 0 V, f = 1.0 MHz.
Parameter
(T
J
appreciable attenuation occurs
= 25°C unless otherwise noted)
Above this frequency,
Test Conditions
V
I
I
R
RWM
F
= 1.0 mA
= 40 mA
http://onsemi.com
= 12 V
d
).
2
Contact Discharge
Symbol
V
V
f
RWM
C
3dB
I
R
BR
R
d
13.7
Min
53
42
−
−
Symbol
T
V
T
P
P
T
OP
stg
PP
R
T
L
15.7
Typ
64
50
55
−
−
−55 to 150
−40 to 85
Value
180
360
260
30
Max
17.7
0.1
12
75
55
Unit
mW
mW
Unit
MHz
kV
°C
°C
°C
mA
pF
W
V
V