CMF10120D Cree Inc, CMF10120D Datasheet

SIC MOSFET N-CH 1200V 24A TO247

CMF10120D

Manufacturer Part Number
CMF10120D
Description
SIC MOSFET N-CH 1200V 24A TO247
Manufacturer
Cree Inc
Series
Z-FET™r
Datasheets

Specifications of CMF10120D

Fet Type
SiCFET N-Channel, Silicon Carbide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 10A, 20V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 500µA
Gate Charge (qg) @ Vgs
47.1nC @ 20V
Input Capacitance (ciss) @ Vds
928pF @ 800V
Power - Max
152W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.16ohm
Rds(on) Test Voltage Vgs
20V
Rohs Compliant
YES
Configuration
Single
Resistance Drain-source Rds (on)
160 mOhms
Forward Transconductance Gfs (max / Min)
3.7 S, 3.4 S
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
24 A
Power Dissipation
152 W
Mounting Style
Through Hole
Gate Charge Qg
47.1 nC
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
CMF10120D
Features
Benefits
Applications
Maximum Ratings
Symbol
I
I
E
E
I
VGS
P
T
T
Md
D
Dpulse
AR
Z-FET
AS
AR
tot
J
L
, T
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
High Temperature Operation
High Frequency Operation
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
stg
TM
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche
Energy
Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Gate – Source Voltage
Maximum Power
Dissipation
Operating Junction and
Storage Temperature
Range
Solder Temperature
Mounting Torque
MOSFET
Parameter
(T
– Silicon Carbide MOSFET
C
= 25°C unless otherwise specified)
24
12
TBD
TBD
TBD
-5/+25
152
-55 to
+125
260
1
8.8
Value
lbf-in
Unit
Nm
°C
°C
W
A
A
A
A
V
J
J
Package
V
V
Pulse width limited by T
I
t
I
t
T
1.6mm (0.063”) from case for 10 sec
M3 or 6-32 screw
Part Number
CMF10120
D
AR
D
AR
GS
GS
C
Subject to change without Notice
= 20A, V
= 20A, V
= 25°C
limited by T
limited by T
= 20V, T
= 20V, T
DD
DD
Test Conditions
C
C
= 50V, L = 9.5mH
= 50V, L = 3mH
= 25°C
= 100°C
J(max)
J(max)
CMF10120D Pre. A
Package
TO-247
J(max)
V
R
Qg
DS
DS(On)
, T
C
= 25°C
= 1200 V
= 160 mΩ
= 47.1 nC
Marking
CMF10120D
1
Notes

Related parts for CMF10120D

CMF10120D Summary of contents

Page 1

... DD t limited J(max) -5/+25 V 152 25°C C -55 to °C +125 1.6mm (0.063”) from case for 10 sec 260 ° 6-32 screw 8.8 lbf-in Subject to change without Notice CMF10120D Pre 1200 160 mΩ DS(On 47.1 nC Package Marking TO-247 CMF10120D Notes , T = 25°C J(max ...

Page 2

... DS = 0V, T =125° 20V 20V 10A D = 20V 10A, T =125° 20V 10A = 20V 10A, T =125° 0V 800V 25mV AC = 800V -2/20V 6.8Ω, = 10A, R G(ext) = 25mV AC Test Conditions Notes = 5A 25° 5A 125° 10A T = 25° Test Conditions Notes 2 CMF10120D Pre. A ...

Page 3

... Fig 2. Typical Output Characteristics T J 1.15 1.1 1.05 1 125C 0.95 25C 0.9 0. Fig 4. Normalized On-Resistance vs. Subject to change without Notice Test Conditions Notes = 800V -2/20V GS 10V 12V 14V 16V 18V 20V ( 125° 100 125 150 Temperature ( C) Temperature 3 CMF10120D Pre. A ...

Page 4

... Fig 6. Transient Thermal Impedance Junction to Case 10000 MHz 1000 100 150 200 Fig 5b. Typical Capacitance vs. VDS (0 - 800V) 1E-3 10E-3 100E-3 Time (sec) Subject to change without Notice MHz C iss C oss C rss 200 400 600 800 V ( CMF10120D Pre. A ...

Page 5

... Gate Charge (nC) Fig 9. Typical Gate Charge Characteristics @ 25°C 400 EON EOFF 350 300 250 200 150 100 50 0 100 125 0 Fig 8. Inductive Switching Energy vs. Drain 40 50 Fig 10. Typical Avalanche Voltage Subject to change without Notice EON EOFF Drain Current (A) Current TBD 5 CMF10120D Pre. A ...

Page 6

... Fig 11. Switching Waveform Test Circuit Fig 13. Body Diode Recovery Waveform Fig 12. Switching Test Waveform Times Fig 14. Body Diode Recovery Test Subject to change without Notice CMF10120D Pre ...

Page 7

... Copyright © 2006-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Package TO-247-3 Subject to change without Notice 7 CMF10120D Pre. A ...

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