STN3N40K3 STMicroelectronics, STN3N40K3 Datasheet - Page 6

• Manufacturer Part Number: STN3N40K3
• Description: MOSFET N-CH 400V 1.8A SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STN3N40K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 165pF @ 50V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11222-2

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
0.001
0.01
0.1
(A)
I
I
D
D
1
V
1.5
(V)
3.5
3.0
2.0
1.0
0.5
2.5
0.1
(A)
12
10
GS
0
6
2
8
4
0
0
0
V
Electrical characteristics
DS
Safe operating area
Output characteristics
Gate charge vs gate-source voltage Figure 7.
5
2
1
V
10
4
GS
V
=10V
DD
I
10
D
=1.8A
=320V
15
6
20
8
100
Tc=25°C
Single pulse
Tj=150°C
10
25
V
V
DS
GS
5V
Q
(V)
7V
6V
V
Doc ID 17697 Rev 2
g
10ms
100µs
10µs
1ms
DS
(nC)
AM08994v1
AM09050v1
AM08996v1
250
150
350
300
200
100
50
0
(V)
Figure 3.
Figure 5.
R
DS(on)
3.0
2.0
1.0
0.5
2.5
1.5
(A)
(Ω)
4.0
3.8
2.6
I
4.2
3.4
3.2
3.0
2.8
3.6
D
0
0
0.2
Thermal impedance
Transfer characteristics
Static drain-source on resistance
0.4
2
0.6
V
GS
0.8
V
=10V
DS
4
=15V
1.0 1.2 1.4 1.6
6
8
STN3N40K3
I
D
V
(A)
AM08997v1
AM08995v1
GS
(V)