STD96N3LLH6 STMicroelectronics, STD96N3LLH6 Datasheet - Page 8

• Manufacturer Part Number: STD96N3LLH6
• Description: MOSFET N-CH 30V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD96N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11214-2

Test circuits
3
8/15
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
Doc ID 18432 Rev 1
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 13. Gate charge test circuit
Figure 15. Unclamped inductive load test
Figure 17. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
STD96N3LLH6
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD