STB6N52K3 STMicroelectronics, STB6N52K3 Datasheet - Page 8

• Manufacturer Part Number: STB6N52K3
• Description: MOSFET N-CH 525V 5A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STB6N52K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11212-2

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
V
GS(th)
(norm)
1.00
0.80
1.10
0.70
0.90
(V)
V
0.6
0.5
0.4
0.7
0.3
(mJ)
0.8
0.9
E
110
100
SD
-75
60
90
50
40
AS
80
70
30
20
10
0
0
0
vs temperature
characteristics
starting Tj
1
20
-25
T
J
=150°C
2
40
3
25
60
4
T
80
J
5
75
=-50°C
V
I
D
DD
100
6
=2.5A
=50 V
T
125
J
7
=25°C
120 140
8
Doc ID 14994 Rev 2
T
AM08862v1
AM08865v1
AM08866v1
I
J
SD
(°C)
T
(A)
J
(°C)
STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
R
BV
DS(on)
0.95
1.05
0.90
(norm)
1.10
1.00
DSS
2.5
1.5
1.0
0.5
2.0
0
-75
-75
temperature
-25
-25
25
25
VDSS
75
75
vs temperature
125
125
AM08863v1
AM08864v1
T
T
J
J
(°C)
(°C)