STL160N3LLH6 STMicroelectronics, STL160N3LLH6 Datasheet - Page 6

• Manufacturer Part Number: STL160N3LLH6
• Description: MOSFET N-CH 30V 160A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL160N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 61.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6375pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11204-2

Electrical characteristics
2.1
6/14
Figure 2.
Figure 4.
Figure 6.
100
0.1
(norm)
BV
(A)
10
I
D
I
1
D
1.05
0.90
1.10
1.00
0.95
140
100
0.1
180
160
120
DSS
(A)
80
60
40
20
0
-75
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
4V
0.5
-25
1
1.0
V
GS
25
=10V
1.5
VDSS
75
10
Tc=25°C
Single pulse
Tj=150°C
2.0
vs temperature
125
2.5
V
DS
175
(V)
3V
100ms
Doc ID 18223 Rev 1
10ms
AM08599v1
1s
AM08602v1
AM08600v1
V
T
DS
J
(°C)
(V)
Figure 3.
Figure 5.
Figure 7.
R
DS(on)
140
120
100
1.05
0.95
1.15
1.10
1.00
(A)
(Ω)
80
60
40
20
I
D
0
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
1
5
2
10
3
V
4
15
DS
=2V
5
V
20
GS
6
=10V
25
7
8
STL160N3LLH6
30
9
35
10
AM08601v1
AM08603v1
V
I
D
GS
(A)
(V)