STL35N15F3 STMicroelectronics, STL35N15F3 Datasheet - Page 4

• Manufacturer Part Number: STL35N15F3
• Description: MOSFET N-CH 150V 33A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL35N15F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 1905pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11208-2

Electrical characteristics
2
4/11
Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
R
DSS
GSS
Q
oss
t
t
rss
iss
gs
gd
r
f
G
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 018598 Rev 1
V
R
Figure 13
V
V
V
V
Figure 14
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
I
V
V
V
V
V
D
GS
GS
DD
DS
DD
G
DS
DS
GS
DS
GS
= 1 mA, V
= 4.7 Ω, V
=75 V, I
=0
=15 V, I
= V
= 10 V, I
=25 V, f=1 MHz,
=10 V
= Max rating,
= Max rating @125 °C
= ±20 V
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
D
GS
= 3.5 A,
= 6 A
GS
= 3.5 A
= 250 µA
= 0
=10 V
Min.
Min.
Min.
150
2
-
-
-
-
0.0355
1905
Typ.
Typ.
49.4
22.6
Typ.
171
7.3
1.7
14
11
57
20
28
STL35N15F3
Max.
Max.
Max.
±
0.04
100
10
-
-
-
-
1
4
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
Ω
V
V
Ω