STH270N4F3-6 STMicroelectronics, STH270N4F3-6 Datasheet - Page 4

• Manufacturer Part Number: STH270N4F3-6
• Description: MOSFET N-CH 40V 180A H2PAK-6
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STH270N4F3-6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 7400pF @ 25V
• Power - Max: 300W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11218-2

Electrical characteristics
2
4/13
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Table 5.
1.
Table 6.
Symbol
V
Symbol
Symbol
R
V
t
t
(BR)DSS
g
d(on)
d(off)
C
I
I
C
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
t
t
oss
r
f
iss
rss
gs
gd
g
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 16957 Rev 1
V
V
V
V
(see Figure 14)
I
V
V
V
V
D
DS
DS
DD
GS
DS
DS
DS
DS
GS
= 250µA, V
= 10V
= V
= 20V, I
= 10V, I
= Max rating,
= Max rating, T
= ± 20V
= 10V
= 25V, f = 1 MHz, V
V
R
(see Figure 13)
V
R
(see Figure 13)
Test conditions
Test conditions
GS
DD
DD
G
G
= 4.7Ω , V
= 4.7Ω , V
, I
,
= 20V, I
= 20V, I
I
D
D
D
D
= 160A,
Test conditions
= 80A
= 100A
= 250µA
GS
= 0
GS
GS
D
D
c
=125°C
= 80A
= 80A
= 10V,
= 10V,
GS
=0
Min.
Min.
40
2
Min.
7400
1800
Typ.
Typ.
1.40
200
110
50
30
25
Typ.
180
110
25
45
STH270N4F3-6
Max.
±200
Max.
1.70
100
150
10
Max Unit
4
Unit
Unit
mΩ
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S