STL26NM60N STMicroelectronics, STL26NM60N Datasheet - Page 5

• Manufacturer Part Number: STL26NM60N
• Description: MOSFET N-CH 600V 19A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 125mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11207-2

STL26NM60N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18472 Rev 1
I
I
V
I
V
(see
V
R
(see
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 19 A, V
= 19 A, di/dt = 100 A/µs
= 19 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
= 300 V, I
Figure
Figure
Figure
Test conditions
Test conditions
15)
15),
18)
GS
D
GS
j
= 150 °C
= 10 A,
= 0
= 10 V
Figure
15)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
31.5
32.5
Typ.
370
450
5.8
7.5
13
25
85
50
Max. Unit
Max
1.5
19
76
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/13
A
A
V
A
A