STP180N10F3 STMicroelectronics, STP180N10F3 Datasheet - Page 5

• Manufacturer Part Number: STP180N10F3
• Description: MOSFET N-CH 100V 120A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP180N10F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.1 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 6665pF @ 25V
• Power - Max: 315W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11228-5

STH180N10F3-2, STP180N10F3
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source drain diode
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Parameter
Doc ID 14933 Rev 3
I
I
di/dt = 100 A/µs,
V
(see
SD
SD
DD
=120 A, V
=120 A,
Test conditions
=80 V, Tj=150°C
Figure
18)
GS
=0
Min.
-
-
-
Electrical characteristics
295.7
Typ.
83.4
7.1
Max.
120
480
1.5
Unit
nC
ns
A
A
V
A
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