STP24NM60N STMicroelectronics, STP24NM60N Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
STP24NM60N
Manufacturer Part Number
STP24NM60N
Description
MOSFET N-CH 600V 17A TO220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP24NM60N.pdf
(15 pages)
Specifications of STP24NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 50V
Power - Max
125W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11229-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP24NM60N
Manufacturer:
STMicroelectronics
Quantity:
200
Part Number:
STP24NM60N
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/15
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Table 6.
1. C
Table 7.
C
Symbol
V
Symbol
Symbol
R
V
oss eq.
t
t
(BR)DSS
increases from 0 to 80% V
d(on)
d(off)
C
t
I
I
C
DS(on)
C
Q
t
GS(th)
Q
GSS
r(v)
DSS
Q
R
f(i)
o(eff).
oss
iss
rss
gs
gd
g
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
DS
GS
.
= 0)
Doc ID 18047 Rev 1
V
V
V
f=1 MHz open drain
V
V
(see Figure 16)
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 480 V, I
V
R
(see Figure 15)
Test conditions
Test conditions
GS
DD
G
= 4.7 Ω, V
, I
= 300 V, I
GS
D
Test conditions
D
D
= 250 µA
= 8 A
= 0
= 17 A,
GS
C
GS
D
=125 °C
= 0
= 8.5 A,
= 10 V
STF24NM60N, STP24NM60N
Min.
Min.
600
2
-
-
-
-
Min.
-
0.168
1400
Typ.
Typ.
190
7.4
44
46
23
3
5
7
Typ.
11.5
16.5
73
37
oss
when V
Max.
Max.
0.19
100
100
Max Unit
1
4
-
-
-
-
-
DS
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
Ω