IXFT60N50P3 IXYS, IXFT60N50P3 Datasheet - Page 3

• Manufacturer Part Number: IXFT60N50P3
• Description: MOSFET N-CH 500V 60A TO268
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFT60N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 6250pF @ 25V
• Power - Max: 1040W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.1
• Ciss, Typ, (pf): 6250
• Qg, Typ, (nc): 96
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-268
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
0
V
GS
10
Fig. 5. R
= 10V
2
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
1
20
4
30
DS(on)
2
40
6
Normalized to I
Drain Current
50
I
3
V
D
V
8
DS
- Amperes
DS
V
- Volts
60
- Volts
GS
= 10V
10
V
7V
4
GS
70
6V
4V
5V
D
= 10V
8V
= 30A Value vs.
7V
6V
5V
T
12
80
J
= 125ºC
5
J
J
90
= 25ºC
= 125ºC
14
T
J
= 25ºC
100
6
16
110
120
18
7
120
100
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
60
40
20
70
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
-25
-25
= 10V
IXFT60N50P3 IXFQ60N50P3
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
Junction Temperature
10
T
Case Temperature
T
Normalized to I
V
C
J
GS
25
25
- Degrees Centigrade
- Degrees Centigrade
= 10V
8V
V
7V
6V
5V
DS
15
50
50
- Volts
IXFH60N50P3
D
75
75
= 30A Value vs.
20
I
D
= 60A
100
100
J
25
= 25ºC
I
125
125
D
= 30A
150
150
30