IXFK64N60P3 IXYS, IXFK64N60P3 Datasheet - Page 3

• Manufacturer Part Number: IXFK64N60P3
• Description: MOSFET N-CH 600V 64A TO264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFK64N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 1130W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.095
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1130
• Rthjc, Max, (ºc/w): 0.11
• Package Style: TO-264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
3.0
2.6
2.2
1.8
1.4
1.0
0.6
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
0
V
GS
Fig. 5. R
2
= 10V
Fig. 1. Output Characteristics @ T
20
Fig. 3. Output Characteristics @ T
1
DS(on)
4
40
2
Normalized to I
6
Drain Current
60
I
3
V
D
V
DS
- Amperes
DS
- Volts
8
- Volts
T
80
J
V
4
V
GS
= 125ºC
GS
D
10
= 10V
= 10V
= 32A Value vs.
7V
7V
6V
5V
6V
4V
5V
100
5
J
J
T
12
= 25ºC
J
= 125ºC
= 25ºC
120
6
14
140
16
7
140
120
100
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
60
40
20
70
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
-25
-25
= 10V
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
Junction Temperature
10
V
T
Case Temperature
T
Normalized to I
GS
C
J
25
25
- Degrees Centigrade
- Degrees Centigrade
= 10V
8V
V
7V
6V
5V
DS
15
50
50
- Volts
D
75
IXFK64N60P3
75
IXFX64N60P3
= 32A Value vs.
20
I
D
= 64A
100
100
J
25
= 25ºC
I
125
125
D
= 32A
150
150
30