IXFX80N60P3 IXYS, IXFX80N60P3 Datasheet - Page 5

• Manufacturer Part Number: IXFX80N60P3
• Description: MOSFET N-CH 600V 80A PLUS247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFX80N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 13100pF @ 25V
• Power - Max: 1300W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 90 S, 55 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 1300 W
• Mounting Style: Through Hole
• Fall Time: 8 ns
• Gate Charge Qg: 190 nC
• Rise Time: 25 ns
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.07
• Ciss, Typ, (pf): 13100
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1300
• Rthjc, Max, (ºc/w): 0.096
• Package Style: PLUS247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXFK80N60P3
IXFX80N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.2
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: F_80N60P3(W9)03-10-11