IXFK80N60P3 IXYS, IXFK80N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFK80N60P3
• Description: MOSFET N-CH 600V 80A TO264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFK80N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 13100pF @ 25V
• Power - Max: 1300W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 90 S, 55 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 1300 W
• Mounting Style: Through Hole
• Fall Time: 8 ns
• Gate Charge Qg: 190 nC
• Rise Time: 25 ns
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.07
• Ciss, Typ, (pf): 13100
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1300
• Rthjc, Max, (ºc/w): 0.096
• Package Style: TO-264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
240
200
160
120
100
120
100
80
40
80
60
40
20
10
0
1
0
0.3
3.0
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
4.0
10
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
4.5
15
= 125ºC
0.7
V
V
V
SD
DS
GS
5.0
0.8
- Volts
20
- Volts
- Volts
T
J
= 125ºC
0.9
- 40ºC
T
25ºC
5.5
25
J
= 25ºC
C oss
C iss
C rss
1.0
6.0
30
1.1
6.5
35
1.2
7.0
1.3
40
1000
160
140
120
100
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
1
0
10
0
0
T
T
Single Pulse
V
I
I
J
C
20
D
G
R
DS
= 150ºC
= 25ºC
DS(on)
= 40A
= 10mA
= 300V
Fig. 12. Forward-Bias Safe Operating Area
20
Limit
40
Fig. 8. Transconductance
60
40
Fig. 10. Gate Charge
Q
80
G
- NanoCoulombs
I
D
V
- Amperes
DS
100
100
60
- Volts
120
IXFK80N60P3
IXFX80N60P3
80
140
T
J
= - 40ºC
160
100
25ºC
125ºC
180
100µs
1ms
1,000
200
120