IXFB132N50P3 IXYS, IXFB132N50P3 Datasheet - Page 2

• Manufacturer Part Number: IXFB132N50P3
• Description: MOSFET N-CH 500V 132A PLUS264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFB132N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 132A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 18600pF @ 25V
• Power - Max: 1890W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 132
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 18600
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1890
• Rthjc, Max, (ºc/w): 0.066
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
V
V
Gate Input Resistance
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 66A, -di/dt = 100A/μs
= 100A, V
= 100V, V
= 1Ω (External)
= 10V, I
= 0V, V
= 10V, V
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
DS
D
GS
DS
DS
GS
= 66A, Note 1
= 25V, f = 1MHz
= 0V, Note 1
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
DSS
DSS
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
Characteristic Values
68
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1750
0.13
Typ.
18.6
Typ.
115
16.4
250
5.0
1.0
1.9
44
72
90
52
9
8
0.066 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
132
530
250 ns
1.5
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
A
Ω
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS264
6,727,585
6,771,478 B2 7,071,537
IXFB132N50P3
TM
(IXFB) Outline
7,005,734 B2
7,063,975 B2
7,157,338B2