STY112N65M5 STMicroelectronics, STY112N65M5 Datasheet - Page 6

• Manufacturer Part Number: STY112N65M5
• Description: MOSFET N-CH 650V 93A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY112N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 450W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 710 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 96 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 350 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11236-5

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
BV
(norm)
1.07
0.93
1.05
1.03
0.95
1.01
0.99
0.97
DSS
-50
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
-25
0
I
D
25
=1mA
VDSS
50
75
vs temperature
100
125
Doc ID 15321 Rev 2
AM08895v1
T
J
(°C)
Figure 3.
Figure 5.
Figure 7.
10
R
10
0.022
0.014
0.020
0.018
0.016
DS(on)
K
10
-2
-1
(Ω)
-4
Single pulse
δ=0.5
0.2
0.1
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
0.01
20
-3
V
GS
0.02
=10V
40
10
-2
0.05
60
Zth=k Rthj-c
δ=tp/τ
10
tp
τ
-1
STY112N65M5
80
t
p
(s)
AM09125v1
AM08896v1
I
D
(A)