SI8660BA-B-IS1 Silicon Laboratories Inc, SI8660BA-B-IS1 Datasheet - Page 4

• Manufacturer Part Number: SI8660BA-B-IS1
• Description: IC ISOLATOR 6CH 3.75KV 16-SOIC
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8660BA-B-IS1

• Number Of Channels: 6
• Supply Voltage (max): 3.75 KV
• Mounting Style: SMD/SMT
• Package / Case: SOIC-16 Narrow
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-2115-5

Si8660/61/62/63
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Electrical Characteristics
(V
4
Parameter
Ambient Operating Temperature*
Supply Voltage
*Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels,
Parameter
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Negative-Going
Lockout Hysteresis
Positive-Going Input Threshold
Negative-Going
Input Threshold
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Output Impedance
Notes:
DD1
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
2. t
3. Start-up time is the time period from the application of power to valid data at the output.
= 5 V ±10%, V
and supply voltage.
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
the same supply voltages, load, and ambient temperature.
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units operating at
DD2
1
= 5 V ±10%, T
VDDUV+
VDDUV–
VDD
Symbol
A
V
VT+
V
VT–
V
V
V
Z
= –40 to 125 ºC)
HYS
I
OH
OL
IH
L
IL
O
HYS
Symbol
V
V
T
DD1
DD2
A
V
V
Test Condition
All inputs falling
All inputs rising
DD1
DD1
loh = –4 mA
lol = 4 mA
, V
, V
150 Mbps, 15 pF, 5 V
Rev. 1.2
DD2
DD2
Test Condition
falling
rising
V
DD1
,V
1.95
1.88
0.38
Min
1.4
1.0
2.0
50
—
—
—
DD2
—
Min
–40
2.5
2.5
– 0.4
2.24
2.16
1.67
1.23
0.44
Typ
4.8
Typ
0.2
70
—
—
—
50
25
—
—
2.375
2.325
Max
0.50
±10
Max
1.9
1.4
0.8
0.4
125
95
5.5
5.5
—
—
—
Unit
Unit
mV
µA
°C
V
V
V
V
V
V
V
V

V
V
V