STM32F217VGT6 STMicroelectronics, STM32F217VGT6 Datasheet - Page 87
STM32F217VGT6
Manufacturer Part Number
STM32F217VGT6
Description
MCU ARM 1024KB FLASH 100LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F215RET6.pdf
(158 pages)
Specifications of STM32F217VGT6
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
120MHz
Connectivity
CAN, Ethernet, I²C, IrDA, LIN, MMC, SPI, UART/USART, USB OTG
Peripherals
Brown-out Detect/Reset, DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
82
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
132K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 16x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LFQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11187
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F217VGT6
Manufacturer:
STMicroelectronics
Quantity:
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STM32F215xx, STM32F217xx
Table 37.
1. TBD stands for “to be defined”.
5.3.14
Table 38.
1. Based on characterization results, not tested in production.
2. On V
Symbol
V
V
Symbol
S
ESD(HBM)
ESD(CDM)
EMI
BAT
pin, V
Parameter
EMI characteristics
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
ESD absolute maximum ratings
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
●
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Peak level
Electrostatic discharge
voltage (human body
model)
Electrostatic discharge
voltage (charge device
model)
ESD(HBM)
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
is limited to 1000 V.
Ratings
V
120 MHz, code running
from Flash with prefetch
and cache enabled
V
120 MHz, code running
from Flash with prefetch
and cache enabled, and
PLL spread spectrum
enabled
DD
DD
= 3.3 V, T
= 3.3 V, T
Conditions
(1)
A
A
= 25 °C,
= 25 °C,
T
T
A
A
Doc ID 17050 Rev 4
= +25 °C conforming to JESD22-A114
= +25 °C conforming to JESD22-C101
130 MHz to 1GHz
frequency band
Conditions
SAE EMI Level
30 to 130 MHz
0.1 to 30 MHz
Monitored
8/48 MHz
Max vs. [f
TBD
TBD
TBD
TBD
4
Electrical characteristics
Class
2
II
HSE
8/72 MHz
/f
TBD
TBD
TBD
TBD
HCLK
Maximum
4
value
2000
500
]
(2)
(1)
dBµV
dBµV
Unit
87/158
-
Unit
V
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