MC100EP196BFAR2G ON Semiconductor, MC100EP196BFAR2G Datasheet - Page 10

IC PDC PROGR DELAY CHIP 32LQFP

MC100EP196BFAR2G

Manufacturer Part Number
MC100EP196BFAR2G
Description
IC PDC PROGR DELAY CHIP 32LQFP
Manufacturer
ON Semiconductor
Series
100EPr
Type
Programmable Delay Chipr
Datasheet

Specifications of MC100EP196BFAR2G

Input
ECL, LVCMOS, LVTTL
Output
ECL
Frequency - Max
1.2GHz
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
32-LQFP
Frequency-max
1.2GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC100EP196BFAR2G
Manufacturer:
ON Semiconductor
Quantity:
10 000
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
14. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
15. Specification limits represent the amount of delay added with the assertion of each individual delay control pin. The various combinations
16. Deviation from a linear delay (actual Min to Max) in the 1024 programmable steps.
17. For NLIN, Max temperature is 70°C.
18. Duty cycle skew guaranteed only for differential operation measured from the cross point of the input to the cross point of the output.
19. This setup time defines the amount of time prior to the input signal the delay tap of the device must be set.
20. This setup time is the minimum time that EN must be asserted prior to the next transition of IN/IN to prevent an output response greater than
21. This hold time is the minimum time that EN must remain asserted after a negative going IN or positive going IN to prevent an output response
22. This release time is the minimum time that EN must be deasserted prior to the next IN/IN transition to ensure an output response that meets
Table 11. AC CHARACTERISTICS
Symbol
f
V
t
t
t
Dt
NLIN
t
t
t
t
t
V
t
t
max
PLH
PHL
RANGE
SKEW
s
h
R
jitter
r
f
outpp
PP
of asserted delay control inputs will typically realize D0 resolution steps across the specified programmable range.
±75 mV to that IN/IN transition.
greater than ±75 mV to that IN/IN transition.
the specified IN to Q propagation delay and transition times.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Maximum Frequency
Output Voltage Amplitude
Propagation Delay
Programmable Range
Step Delay (Note 15)
Non−Linearity (Notes 16 and 17)
0 to 511 decimal values for D[9:0] range
512 to 1023 dec. values for D[9:0] range
1 to 1023 decimal values for D[9:0] range
Duty Cycle Skew (Note 18) |t
Setup Time
Hold Time
Release Time
RMS Random Clock Jitter @ 1.2 GHz
IN to Q; D(0:10) = 1023 or SETMAX
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Time @ 50 MHz
IN to Q; D(0−10) = 1023, SETMAX
IN to Q; D(0:10) = 0 or SETMIN
IN to Q; D(0−10) = 0, SETMIN
Characteristic
20−80% (CASCADE)
EN to Q; D(0−10) = 0
t
PD
EN to IN (Note 20)
IN to EN (Note 21)
EN to IN (Note 22)
SET MAX to LEN
(max) − t
D0 to CASCADE
D to IN (Note 19)
SET MIN to LEN
20−80% (Q)
V
PHL
D to LEN
LEN to D
CC
PD
D0 High
D1 High
D2 High
D3 High
D4 High
D5 High
D6 High
D7 High
D8 High
D9 High
−t
= 0 V; V
(min)
PLH
|
10900
EE
2000
1990
8950
Min
610
375
200
500
300
200
400
300
400
350
150
110
85
= −3.0 V to −3.6 V or V
http://onsemi.com
−40°C
12400
2400
2500
9950
1200
2500
4900
−550
−320
−150
±7.0
±7.0
Typ
820
475
155
310
620
−40
100
180
220
800
160
±11
115
1.2
0.9
1.9
10
16
32
65
25
50
10
13900
10950
2800
2990
1200
Max
575
140
210
2.0
5.0
90
11500
2150
2130
9450
CC
Min
610
400
200
500
300
200
400
300
400
350
150
100
120
= 3.0 V to 3.6 V; V
13000
10450
25°C
2500
2600
1300
2600
5200
−590
−350
−170
±7.0
±7.0
Typ
820
500
166
325
650
−40
100
200
250
800
120
175
±11
1.2
1.1
2.6
18
33
72
25
40
11
CC
− 2.0 V.
14500
11450
2950
3130
1200
Max
600
140
230
2.0
5.0
90
EE
= 0 V (Note 14)
12250
10110
2250
2380
Min
610
425
200
500
300
200
400
300
400
350
150
100
120
13750
11100
85°C
2700
2800
1400
2800
5500
−650
−400
−200
±7.0
±7.0
Typ
820
525
195
370
720
±11
−40
120
210
260
800
130
190
1.2
1.2
3.3
15
26
46
92
25
30
15250
12110
3050
3380
1200
Max
625
165
250
2.0
5.0
90
GHz
Unit
mV
mV
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps

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