NB3L553DR2G ON Semiconductor, NB3L553DR2G Datasheet - Page 5

no-image

NB3L553DR2G

Manufacturer Part Number
NB3L553DR2G
Description
IC BUFFER 1:4 CLK 180MHZ 8-SOIC
Manufacturer
ON Semiconductor
Type
Fanout Buffer (Distribution)r
Datasheet

Specifications of NB3L553DR2G

Number Of Circuits
1
Ratio - Input:output
1:4
Differential - Input:output
No/No
Input
LVCMOS, LVTTL
Output
LVCMOS, LVTTL
Frequency - Max
200MHz
Voltage - Supply
2.38 V ~ 5.25 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
200MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NB3L553DR2GOSCT-ND
Manufacturer:
ON
Quantity:
220
3. Outputs loaded with external R
4. Measured with rail−to−rail input clock
5. Measured on rising edges at V
Table 6. AC CHARACTERISTICS; V
AC CHARACTERISTICS; V
AC CHARACTERISTICS; V
decoupling capacitor should be connected between V
Symbol
Symbol
Symbol
t
t
jitter
jitter
t
t
t
t
t
t
skew
skew
skew
skew
skew
skew
t
t
t
t
t
t
f
f
f
r
r
r
pd
pd
pd
in
/t
in
/t
in
/t
f
(f)
f
(f)
f
Input Frequency
Output rise and fall times; 0.8 V to 2.0 V
Propagation Delay, CLK to Q
Output−to−output skew; (Note 5)
Device−to−device skew, (Note 5)
Input Frequency
RMS Phase Jitter (Integrated 12 kHz −
20 MHz) (See Figures 2 and 3)
Output rise and fall times; 0.8 V to 2.0 V
Propagation Delay, CLK to Q
Output−to−output skew; (Note 5)
Device−to−device skew, (Note 5)
Input Frequency
RMS Phase Jitter (Integrated 12 kHz −
20 MHz) (See Figures 2 and 3)
Output rise and fall times; 0.8 V to 2.0 V
Propagation Delay, CLK to Q
Output−to−output skew; (Note 5)
Device−to−device skew, (Note 5)
DD
DD
Characteristic
Characteristic
DD
L
= 3.3 V +5%
= 5.0 V +5%
= 33 W series resistor and C
÷ 2 between any two outputs with equal loading.
DD
Characteristic
= 2.5 V +5%
n
n
n
(Note 4)
(Note 4)
(Note 4)
(V
(V
DD
DD
= 3.15 V to 3.45 V, GND = 0 V, T
= 4.75 V to 5.25 V, GND = 0 V, T
DD
http://onsemi.com
and GND.
(V
DD
L
= 2.375 V to 2.625 V, GND = 0 V, T
= 15 pF to GND for proper operation. Duty cycle out = duty in. A 0.01 mF
f
f
carrier
carrier
5
Conditions
= 100 MHz
= 100 MHz
Min
A
A
= −40°C to +85°C) (Note 3)
= −40°C to +85°C) (Note 3)
Min
Min
Min
2.2
2.0
1.7
A
= −40°C to +85°C) (Note 3)
Typ
Typ
Typ
1.0
3.0
0.6
2.4
0.3
2.5
35
18
35
29
35
Max
Max
Max
200
500
200
500
200
500
1.5
5.0
1.0
4.0
0.7
4.0
50
50
50
Unit
MHz
Unit
MHz
Unit
MHz
ns
ns
ps
ps
ns
ns
ps
ps
ns
ns
ps
ps
fs
fs

Related parts for NB3L553DR2G