SI4136-F-GM Silicon Laboratories Inc, SI4136-F-GM Datasheet - Page 4

• Manufacturer Part Number: SI4136-F-GM
• Description: IC SYNTHESIZER RF1/RF2/IF 28QFN
• Manufacturer: Silicon Laboratories Inc
• Type: Frequency Synthesizerr

Specifications of SI4136-F-GM

• Package / Case: 28-QFN
• Pll: Yes
• Input: Clock
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 1:2
• Differential - Input:output: No/No
• Frequency - Max: 2.5GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Frequency-max: 2.5GHz
• Operating Frequency: 62.5 MHz to 1000 MHz
• Supply Current: 25.7 mA
• Operating Temperature Range: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Power Gain Typ: 3.5 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 336-1178

Si4136/Si4126
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Parameter
DC Supply Voltage
Input Current
Input Voltage
Storage Temperature Range
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
3. For signals SCLK, SDATA, SEN, PWDN, and XIN.
Typical values apply at nominal supply voltages and an operating temperature of 25°C unless otherwise stated.
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
this device should only be done at ESD-protected workstations.
3
3
Parameter
Symbol
1,2
V
V
T
DD
A

Symbol
T
V
V
I
STG
DD
IN
Rev. 1.41
IN
Test Condition
(V
(V
DDR
DDI
– V
– V
DDD
DDD
–0.3 to V
),
)
–0.5 to 4.0
–55 to 150
Value
±10
–0.3
DD
Min
–40
2.7
+0.3
Typ
3.0
25
—
Max
3.6
0.3
85
Unit
mA
o
V
V
C
Unit
°C
V
V