LMX2335LM National Semiconductor, LMX2335LM Datasheet - Page 5

• Manufacturer Part Number: LMX2335LM
• Description: IC FREQ SYNTHESIZER DUAL 16-SOIC
• Manufacturer: National Semiconductor
• Series: PLLatinum™r
• Type: PLL Frequency Synthesizerr

Specifications of LMX2335LM

• Pll: Yes with Bypass
• Input: CMOS, TTL
• Output: CMOS
• Number Of Circuits: 1
• Ratio - Input:output: 3:1
• Differential - Input:output: No/No
• Frequency - Max: 1.1GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Frequency-max: 1.1GHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *LMX2335LM

I
I
I
f
f
f
f
I
f
f
f
Pf
Pf
V
V
V
I
I
I
I
I
I
I
I
I
CC
CC
CC
IN
IN
IN
IN
CC-PWDN
OSC
OSC
φ
IH
IL
IH
IL
Do-SOURCE
Do-SINK
Do-SOURCE
Do-SINK
Do-TRI
OSC
IH
IL
Symbol
Absolute Maximum Ratings
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
IN
IN
1
2
V
Power Supply Voltage
Voltage on Any Pin
Storage Temperature Range (T
Lead Temperature (solder 4 sec.)
(T
1
2
CC
L
V
V
with GND = 0V (V
)
CC
P
= 5.0V, V
Power Supply
Current
Operating
Frequency
Powerdown Current
Oscillator Frequency
Maximum Phase Detector Frequency
RF Input Sensitivity
Oscillator Sensitivity
High-Level Input Voltage
Low-Level Input Voltage
High-Level Input Current
Low-Level Input Current
Oscillator Input Current
Oscillator Input Current
Charge Pump Output Current
Charge Pump
TRI-STATE Current
P
= 5.0V; T
I
)
A
= 25˚C, except as specified
Parameter
S
)
LMX2335L
LMX2335L RF1 only
LMX2336L
RF1 and RF2
LMX2336L RF1 only
LMX2335L
LMX2336L
LMX2335L/2336L
RF1 and RF2
−65˚C to +150˚C
−0.3V to +6.5V
−0.3V to +6.5V
−0.3V to V
(Notes 1,
+260˚C
+0.3V
CC
V
V
With resonator load on OSC
No load on OSC
V
V
OSC
(Note 4)
(Note 4)
V
V
V
V
V
(Note 3)
V
(Note 3)
V
(Note 3)
V
(Note 3)
0.5V ≤ V
T
CC
CC
CC
CC
IH
IL
IH
IL
Do
Do
Do
Do
A
= 25˚C
= 0V, V
= 0V, V
= V
= V
= V
= V
= V
= V
= 2.7V to 5.5V
= 5.5V
= 3.0V, f
= 5.0V, f
in
5
CC
CC
P
P
P
P
Do
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating
should only be done at ESD protected work stations.
/2, I
/2, I
/2, I
/2, I
Power Supply Voltage
Operating Temperature (T
Conditions
= 5.5V (Note 4)
= 5.5V
CC
CC
≤ V
V
V
CPo
CPo
CPo
CPo
CC
P
<
>
>
= 5.5V (Note 4)
= 5.5V
CC
2 keV and is ESD sensitive. Handling and assembly of this device
out
100 MHz
100 MHz
= LOW
= LOW
= HIGH
= HIGH
− 0.5V
out
0.8 V
A
0.100
0.050
0.200
0.050
−100
)
−1.0
−1.0
−5.0
Min
−15
−10
0.5
5
5
CC
Value
−1.25
−5.00
1.25
5.00
Typ
4.0
2.0
5.5
3.3
10
1
−40˚C to +85˚C
V
0.2 V
2.7V to 5.5V
CC
Max
100
5.2
2.6
4.3
1.1
1.1
2.0
1.1
1.0
1.0
5.0
10
20
40
www.national.com
7
0
0
to +5.5V
CC
Units
GHz
GHz
GHz
GHz
MHz
MHz
MHz
dBm
V
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
nA
V
V
PP