M48T35Y-70PC1 STMicroelectronics, M48T35Y-70PC1 Datasheet - Page 20

• Manufacturer Part Number: M48T35Y-70PC1
• Description: IC TIMEKPR NVRAM 256KBIT 5V 28DI
• Manufacturer: STMicroelectronics
• Series: Timekeeper®r
• Type: Clock/Calendar/NVSRAMr

Specifications of M48T35Y-70PC1

• Memory Size: 256K (32K x 8)
• Time Format: HH:MM:SS (24 hr)
• Date Format: YY-MM-DD-dd
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 28-DIP Module (600 mil), 28-EDIP
• Function: Clock/Calendar/NV Timekeeping RAM/Watchdog Timer/Battery Backup
• Rtc Memory Size: 32768 Byte
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: Through Hole
• Rtc Bus Interface: Parallel
• Capacitance, Input: 10 pF
• Capacitance, Load: 100 pF
• Capacitance, Output: 10 pF
• Current, Input, Leakage: ±1 μA
• Current, Leakage Input: ± 1 μA (Max.)
• Current, Operating: 30 mA
• Current, Output, Leakage: ±1
• Current, Supply: 30 mA (Max.)
• Data Retention: 10 yrs.
• Density: 256K
• Frequency, Crystal: 32768
• Memory Type: SRAM
• Organization: 32K×8
• Package Type: PDIP28
• Power Dissipation: 1 W
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: +70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 70 ns
• Time, Fall: ≤5 ns
• Time, Read Cycle: 70 ns
• Time, Rise: ≤5 ns
• Time, Write Cycle: 70 ns
• Voltage, Input Range: -0.3 to 7 V
• Voltage, Input, High: 4.8 to 5.8 V
• Voltage, Input, Low: 0.8 V
• Voltage, Output, High: 2.4 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 4.5 to 5.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2851-5

DC and AC parameters
Table 10.
1. Valid for ambient operating temperature: T
2. V
3. V
4. t
Table 11.
1. Valid for ambient operating temperature: T
2. All voltages referenced to V
3. CAPHAT™ and M4T32-BR12SH1 SNAPHAT
4. Using larger M4T32-BR12SH6 SNAPHAT
5. At 25 °C, V
20/28
Symbol
t
DR
noted).
V
noted).
V
rec
V
Symbol
PFD
CC
PFD
PFD
(3)(5)
SO
t
t
t
FB
rec
t
t
(min) = 20 ms for industrial temperature grade 6 device.
F
PD
t
RB
passes V
(2)
R
(min) to V
(max) to V
(3)
(4)
Power-fail deselect voltage
Battery backup switchover voltage
Expected data retention time
CC
Power down/up AC characteristics
Power down/up trip points DC characteristics
PFD
= 0 V.
SS
E or W at V
V
V
V
V
V
PFD
PFD
PFD
PFD
SS
PFD
(min).
fall time of less than t
(min) fall time of less than t
to V
(min) to V
(max) to V
(min) to V
(max) to inputs recognized
PFD
SS
IH
.
(min) V
before power down
PFD
SS
Parameter
PFD
V
(max) V
CC
CC
(min) V
FB
®
fall time
rise time
A
A
may cause corruption of RAM data.
top (recommended for industrial temperature range - grade 6 device).
= 0 to 70 or –40 to 85 °C; V
= 0 to 70 or –40 to 85 °C; V
Parameter
®
(1)(2)
CC
CC
F
only, M4T28-BR12SH1 SNAPHAT
may result in deselection/write protection not occurring until 200 µs after
Doc ID 2611 Rev 9
fall time
rise time
(1)
M48T35Y
M48T35Y
M48T35
M48T35
Grade 1
Grade 6
CC
CC
M48T35Y
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
M48T35
10
10
Min
4.5
4.2
(4)
(5)
®
top t
DR
4.35
= 7 years (typ).
Typ
4.6
3.0
3.0
Min
300
10
10
10
40
0
1
M48T35, M48T35Y
Max
200
Max
4.75
4.5
Years
Years
Unit
Unit
ms
µs
µs
µs
µs
µs
µs
V
V
V
V