M48T08Y-10MH1E STMicroelectronics, M48T08Y-10MH1E Datasheet - Page 22

• Manufacturer Part Number: M48T08Y-10MH1E
• Description: IC TIMEKPR NVRAM 64KBIT 5V 28SOI
• Manufacturer: STMicroelectronics
• Series: Timekeeper®r
• Type: Clock/Calendar/NVSRAMr

Specifications of M48T08Y-10MH1E

• Memory Size: 64K (8K x 8)
• Time Format: HH:MM:SS (24 hr)
• Date Format: YY-MM-DD-dd
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC, 28-SOH (8.48mm Width)
• Function: Clock/Calendar/NV Timekeeping RAM/Battery Backup
• Rtc Memory Size: 8192 Byte
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Rtc Bus Interface: Parallel
• Clock Format: HH
• Clock Ic Type: Timekeeper
• Memory Configuration: 8K X 8
• Supply Voltage Range: 4.75V To 5.5V
• Digital Ic Case Style: SOH
• No. Of Pins: 28
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2830-5; M48T08Y-10MH1

DC and AC parameters
22/31
Table 10.
1. Valid for ambient operating temperature: T
2. V
3. V
Table 11.
1. All voltages referenced to V
2. Valid for ambient operating temperature: T
3. At 55 °C, V
Symbol
Symbol
V
noted).
until 200 µs after V
noted).
using the SOH28 package.
V
t
t
t
t
t
FB
PFD
PFD
PFD
DR
t
t
t
PFX
PFH
SO
F
PD
t
RB
rec
(2)
R
(3)
(min) to V
(max) to V
Power-fail deselect voltage
Battery backup switchover voltage
Expected data retention time
CC
Power down/up AC characteristics
Power down/up trip points DC characteristics
E1 or W at V
V
V
V
V
E1 or W at V
INT low to auto deselect
V
PFD
PFD
PFD
SS
PFD
= 0 V; t
SS
PFD
to V
fall time of less than t
(min) to V
(max) to V
(min) to V
(max) to INT high
CC
(min) fall time of less than t
DR
PFD
passes V
= 8.5 years (typ) at 70 °C. Requires use of M4T32-BR12SH SNAPHAT
IH
(min) V
IH
SS
Parameter
or E2 at V
or E2 at V
PFD
SS
.
PFD
PFD
Parameter
V
Doc ID 2411 Rev 10
(max) V
CC
CC
(min) V
(min).
fall time
rise time
FB
(1)(2)
IL
IL
A
A
may cause corruption of RAM data.
before power-up
before power-down
CC
CC
= 0 to 70 °C; V
= 0 to 70 °C; V
(1)
M48T08
M48T18/T08Y
rise time
fall time
F
may result in deselection/write protection not occurring
CC
CC
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where
10
Min
4.5
4.2
(3)
M48T08, M48T08Y, M48T18
Min
300
10
10
0
0
1
1
Typ
4.6
4.3
3.0
Max
120
40
4.75
Max
4.5
®
top when
Unit
Years
ms
Unit
µs
µs
µs
µs
µs
µs
µs
V
V
V