MCP4161T-503E/MS Microchip Technology, MCP4161T-503E/MS Datasheet - Page 8
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MCP4161T-503E/MS
Manufacturer Part Number
MCP4161T-503E/MS
Description
IC POT DGTL SNGL 50K SPI 8MSOP
Manufacturer
Microchip Technology
Specifications of MCP4161T-503E/MS
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Taps
257
Resistance (ohms)
50K
Number Of Circuits
1
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Non-Volatile
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Resistance In Ohms
50K
Number Of Pots
Single
Taps Per Pot
256
Resistance
50 KOhms
Wiper Memory
Non Volatile
Digital Interface
Serial (4-Wire, SPI)
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Supply Current
550 uA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP4161T-503E/MS
Manufacturer:
MICROCHIP
Quantity:
12 000
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS (CONTINUED)
DS22059B-page 8
DC Characteristics
Rheostat
Differential
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
Capacitance (P
Capacitance (P
Capacitance (P
Note 1:
Parameters
2:
3:
4:
5:
6:
7:
8:
9:
10: Supply current is independent of current through the resistor network
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP4XX1 only.
MCP4XX2 only, includes V
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
POR/BOR is not rate dependent.
A
w
B
)
)
)
R-DNL
Sym
C
C
C
AW
BW
W
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
-0.375
-0.375
-0.375
-0.375
-0.375
-0.375
WZSE
-0.75
-0.75
Min
-0.5
-1.0
-0.5
-1.0
-0.5
-0.5
-0.5
-0.5
—
—
—
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
W
and V
with V
±0.25
±0.25
±0.25
+0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
+0.5
+0.5
+0.5
Typ
120
WFSE
75
75
A
= V
.
DD
+0.375
+0.375
+0.375
+0.375
+0.375
+0.375
W
+0.75
+0.75
Max
+0.5
+1.0
+0.5
+1.0
+0.5
+0.5
+0.5
+0.5
), which changes significantly over voltage and
—
—
—
and V
–40°C ≤ T
B
= V
Units
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
pF
pF
pF
SS
.
A
5 kΩ
10 kΩ
50 kΩ
100 kΩ 8-bit
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
≤ +125°C (extended)
DD
= 5.5V, T
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
7-bit
© 2008 Microchip Technology Inc.
Conditions
A
5.5V, I
3.0V (Note 7)
5.5V, I
3.0V (Note 7)
5.5V, I
3.0V (Note 7)
5.5V, I
3.0V (Note 7)
5.5V, I
3.0V (Note 7)
5.5V, I
3.0V (Note 7)
5.5V, I
3.0V (Note 7)
5.5V, I
3.0V (Note 7)
= +25°C.
W
W
W
W
W
W
W
W
= 900 µA
= 900 µA
= 450 µA
= 450 µA
= 90 µA
= 90 µA
= 45 µA
= 45 µA