AD5227BUJZ10-R2 Analog Devices Inc, AD5227BUJZ10-R2 Datasheet - Page 5

• Manufacturer Part Number: AD5227BUJZ10-R2
• Description: IC DGTL POT 10K UP/DN TSOT23-8
• Manufacturer: Analog Devices Inc

Specifications of AD5227BUJZ10-R2

• Taps: 64
• Resistance (ohms): 10K
• Number Of Circuits: 1
• Temperature Coefficient: 35 ppm/°C Typical
• Memory Type: Volatile
• Interface: Up/Down Counter
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-8, TSOT-8
• Resistance In Ohms: 10K
• End To End Resistance: 10kohm
• Track Taper: Linear
• No. Of Steps: 64
• Resistance Tolerance: ± 20%
• Supply Voltage Range: 2.7V To 5.5V
• Control Interface: 3 Wire, Serial
• No. Of Pots: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
V
V
Digital Input Voltage to GND (CS, CLK, U/D)
Maximum Current
Operating Temperature Range
Maximum Junction Temperature (T
Storage Temperature
Lead Temperature (Soldering, 10 s – 30 s)
Thermal Resistance
1
2
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Maximum terminal current is bounded by the maximum applied voltage
across any two of the A, B, and W terminals at a given resistance, the
maximum current handling of the switches, and the maximum power
dissipation of the package. V
Package power dissipation = (T
DD
A
, V
I
I
I
I
WB
WB
WA
AB
to GND
B
, I
Continuous
, V
Continuous (R
Continuous (R
(R
WA
W
AB
Pulsed
to GND
= 10 kΩ/50 kΩ/100 kΩ)
2
WB
WA
θ
≤ 5 kΩ, A open)
JA
≤ 5 kΩ, B open)
DD
= 5 V.
J
max – T
1
A
) / θ
J
max)
1
1
JA
.
Rating
−0.3 V, +7 V
0 V, V
0 V, V
±20 mA
±1 mA
±1 mA
±500 μA/
±100 μA/±50 μA
−40°C to +105°C
150°C
−65°C to +150°C
245°C
230°C/W
DD
DD
Rev. B | Page 5 of 16
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
AD5227