CAT5126ZI-10-GT3 ON Semiconductor, CAT5126ZI-10-GT3 Datasheet - Page 4

• Manufacturer Part Number: CAT5126ZI-10-GT3
• Description: IC POT DPP OTP 32TAP U/D 8-MSOP
• Manufacturer: ON Semiconductor

Specifications of CAT5126ZI-10-GT3

• Taps: 32
• Resistance (ohms): 10K
• Number Of Circuits: 1
• Temperature Coefficient: 50 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Resistance In Ohms: 10K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 3. ELECTRICAL CHARACTERISTICS
unless otherwise noted. Typical values are at V
1. All devices are production tested at T
2. Digital inputs CS and U/D are connected to GND or V
3. Digital timing is guaranteed by design, not production tested.
4. Power−up time is the period of time from when the power supply is applied until the serial interface is ready for writing.
TIMING CHARACTERISTICS (Note 3)
Symbol
t
SETTLE
120
100
t
10
80
60
40
20
UP
9
8
7
6
5
0
2.5
0
Power−Up Time
Output Settling Time
Figure 4. Wiper Resistance vs.
Programming
Parameter
Figure 2. V
Tap Position @ 255C
Valid
3.5
10
TAP POSITION
V
DD
V
V
(V
DD
DD
= 5.0 V
DD
PP
(V)
= 2.5 V
= 2.5 V to 5.5 V, V
Programming
TYPICAL OPERATING CHARACTERISTICS
vs. V
A
= +25°C and are guaranteed by design for T
Invalid
4.5
20
DD
DD
100 kW potentiometer configuration,
= 5.0 V, T
(V
configuration, C
DD
100 kW variable resistor
DD
= 2.5 V to 5.5 V, V
PP
http://onsemi.com
.
A
Conditions
C
= GND, V
= +25°C, unless otherwise noted.) (Note 1) (continued)
(Note 4)
L
= 10 pF
5.5
30
4
L
H
= 10 pF
= V
300
250
200
150
100
PP
DD
6
5
4
3
2
1
0
2.5
0
, V
= GND, R
L
= GND, T
Figure 5. Wiper Voltage vs. Tap Position
A
Figure 3. I
= −40°C to +85°C.
H
= V
Min
A
DD
= +25°C)
, R
3.5
10
DD
L
= GND, T
Programming vs. V
V
V
0.25
Typ
DD
DD
1
TAP
= 5.0 V
(V)
A
= −40°C to +85°C,
Max
4.5
20
1
V
DD
DD
= 2.5 V
Units
ms
ms
5.5
30