CAT5132ZI-50-GT3 ON Semiconductor, CAT5132ZI-50-GT3 Datasheet - Page 3

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CAT5132ZI-50-GT3

Manufacturer Part Number
CAT5132ZI-50-GT3
Description
IC POT DPP 15V 128TAP I2C 10MSOP
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT5132ZI-50-GT3

Taps
128
Resistance (ohms)
50K
Number Of Circuits
1
Temperature Coefficient
300 ppm/°C Typical
Memory Type
Non-Volatile
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
10-MSOP, Micro10™, 10-uMAX, 10-uSOP
Resistance In Ohms
50K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CAT5132ZI-50-GT3
Manufacturer:
NXP
Quantity:
30 000
2. This parameter is tested initially and after a design or process change that affects the parameter.
3. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
4. Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a potentiometer.
5. LSB = (R
6. n = 1, 2, ..., 127
7. V
Table 4. POTENTIOMETER CHARACTERISTICS
C
Symbol
TC
TC
H
V
R
R
R
potentiometer.
R
RES
A
R
/C
TERM
R
I
+
POT
POT
POT
RPOT
TOL
fc
LIN
Ratio
W
LIN
W
L
@ R
/C
W
H
HM −
; 0 V @ R
Potentiometer Resistance (100 kW)
Potentiometer Resistance (50 kW)
Potentiometer Resistance (10 kW)
Potentiometer Resistance Tolerance
Power Rating
Wiper Current
Wiper Resistance
Voltage on R
Resolution
Absolute Linearity (Note 3)
Relative Linearity (Note 4)
Temperature Coefficient of R
Ratiometric Temperature Coefficient
Potentiometer Capacitances
Frequency Response
R
LM
)/127; where R
L
; V
W
W
Parameter
, R
measured @ R
H
or R
HM
L
and R
POT
W
LM
with no load.
are the highest and lowest measured values on the wiper terminal.
V
W(n)(actual)
V
W(n+1)
(Over recommended operating conditions unless otherwise stated.)
http://onsemi.com
GND = 0 V; V+ = 8 V to 16 V
I
W
I
W
− [V
= ±1 mA @ V+ = 12 V
= ±1 mA @ V+ = 8 V
Test Conditions
− V
R
W(n)
POT
3
W(n)(expected)
(Note 2)
(Note 2)
(Note 2)
25°C
+ LSB] (Notes 6, 7)
= 50 kW
(Notes 6, 7)
GND
Min
10/10/25
Limits
±300
0.78
Typ
100
110
0.4
50
10
70
Max
±0.5
±20
150
200
50
±3
V+
±1
30
(Note 5)
(Note 5)
ppm/°C
ppm/°C
Units
MHz
mW
LSB
LSB
mA
kW
kW
kW
pF
%
%
W
W
V

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