CY62147EV30LL-45B2XA Cypress Semiconductor Corp, CY62147EV30LL-45B2XA Datasheet - Page 7
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CY62147EV30LL-45B2XA
Manufacturer Part Number
CY62147EV30LL-45B2XA
Description
CY62147EV30LL-45B2XA
Manufacturer
Cypress Semiconductor Corp
Series
-r
Datasheet
1.CY62147EV30LL-45B2XA.pdf
(15 pages)
Specifications of CY62147EV30LL-45B2XA
Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (256K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62147EV30LL-45B2XA
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Company:
Part Number:
CY62147EV30LL-45B2XAT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document Number: 001-66256 Rev. **
22. The device is continuously selected. OE, CE = V
23. WE is HIGH for read cycle.
24. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE
25. Address valid before or similar to CE and BHE, BLE transition LOW.
DATA OUT
CURRENT
ADDRESS
DATA OUT
ADDRESS
BHE/BLE
SUPPLY
and CE
V
OE
CE
CC
2
such that when CE
PREVIOUS DATA VALID
HIGH IMPEDANCE
1
is LOW and CE
t
PU
t
Figure 6. Read Cycle No. 1 Address Transition Controlled
LZCE
t
LZBE
t
t
ACE
LZOE
2
t
Figure 7. Read Cycle No. 2: OE Controlled
DBE
is HIGH, CE is LOW. For all other cases CE is HIGH.
IL
t
50%
OHA
, BHE, BLE, or both = V
t
DOE
t
AA
t
RC
IL
.
t
RC
DATA VALID
[23, 24, 25]
DATA VALID
[22, 23]
CY62147EV30 MoBL
t
HZBE
t
t
HZOE
HZCE
t
PD
50%
IMPEDANCE
HIGH
Page 7 of 15
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SB
1
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