IRFR3910 International Rectifier, IRFR3910 Datasheet - Page 2

• Manufacturer Part Number: IRFR3910
• Description: MOSFET
• Manufacturer: International Rectifier

Specifications of IRFR3910

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 115mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 52W
• Thermal Resistance: 2.4°C/W
• Rohs Compliant: No

Electrical Characteristics @ T
IRFR/U3910
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
L
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
D
SM
S
rr
on
V
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
2
V
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
DD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
= 25 , I
= 25V, starting T
175°C
9.0A, di/dt
/ T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 9.0A. (See Figure 12)
520A/µs, V
J
= 25°C, L = 3.1mH
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Pulse width
Uses IRF530N data and test conditions
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
6.4
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Typ. Max. Units
0.12
–––
––– 0.115
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
640
160
6.4
7.5
4.5
–––
–––
–––
130
650
27
37
25
88
300µs; duty cycle
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
4.0
6.2
190
970
–––
25
44
21
1.3
60
16
V/°C
µA
nA
nC
nH
pF
ns
nC
V
V
S
ns
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
MOSFET symbol
integral reverse
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
J
J
2%
= 9.0A
= 9.0A
= 25°C, I
= 25°C, I
= 12
= 5.5
= V
= 50V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 50V
= 0V
GS
Conditions
, I
D
See Fig. 10
D
S
F
D
D
= 250µA
Conditions
GS
= 9.0A
= 9.0A, V
= 250µA
= 9.0A
= 10A
GS
= 0V, T
= 0V
D
www.irf.com
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
D
D
S
)
S
D