MT47H16M16BG-37E IT:B Micron Technology Inc, MT47H16M16BG-37E IT:B Datasheet - Page 11

• Manufacturer Part Number: MT47H16M16BG-37E IT:B
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H16M16BG-37E IT:B

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 180mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Functional Block Diagrams
Figure 3: 64 Meg x 4 Functional Block Diagram
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
BA0–BA1
A0–A12,
RAS#
CAS#
ODT
WE#
CKE
CK#
CS#
CK
15
Address
register
registers
Control
Mode
logic
15
Refresh
counter
13
11
2
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is inter-
nally configured as a multibank DRAM.
13 Row-
address
MUX
2
Column-
counter/
control
address
Bank
logic
latch
13
latch and
decoder
address
Bank 0
row-
Bank 1
Bank 2
Bank 3
9
2
8,192
DM mask logic
(8,192 x 512 x 16)
Sense amplifiers
I/O gating
decoder
Column
8,192
memory
Bank 1
Bank 0
Bank 2
array
(x16)
Bank 3
512
Column 0, Column 1
16
Internal
CK, CK#
11
16
16
READ
latch
CK out
drivers
WRITE
FIFO
and
Column 0, Column 1
CK in
4
4
4
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Mask
Data
MUX
16
4
generator
DQS
1
1
1
1
4
4
4
4
256Mb: x4, x8, x16 DDR2 SDRAM
registers
Input
Data
4
1
1
1
1
4
4
4
4
DQS, DQS#
2
1
4
CK, CK#
DRVRS
Functional Block Diagrams
2
DLL
RCVRS
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
©2003 Micron Technology, Inc. All rights reserved.
ODT control
R2
R2
R2
R2
R2
R2
VssQ
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
V
dd
Q
DQ0–DQ3
DQS, DQS#
DM