MT8HTF12864HDZ-667H1 Micron Technology Inc, MT8HTF12864HDZ-667H1 Datasheet - Page 11

• Manufacturer Part Number: MT8HTF12864HDZ-667H1
• Description: MODULE DDR2 SDRAM 1GB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT8HTF12864HDZ-667H1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 1Mb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 908mA
• Number Of Elements: 8
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 667MT/s
• Features: -
• Package / Case: 200-SODIMM
• Lead Free Status / Rohs Status: Compliant

Table 8: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com-
ponent data sheet
PDF: 09005aef831ec770
htf8c128x64hdz.pdf - Rev. C 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving reads; I
= 0mA; BL = 4, CL = CL (I
(I
commands; Address bus inputs are stable during deselects; Data bus inputs are switch-
ing
DD
),
t
RRD =
t
RRD (I
DD
DD
Specifications and Conditions – 1GB (Die Revision E) (Continued)
Notes:
),
t
DD
RCD =
), AL =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
RCD (I
t
in I
RCD (I
DD2P
DD
DD
); CKE is HIGH, S# is HIGH between valid
(CKE LOW) mode.
) - 1 ×
t
CK (I
DD
);
t
CK =
11
t
CK (I
1GB (x64, DR) 200-Pin DDR2 SODIMM
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
),
t
RC =
t
RC
OUT
Symbol
I
DD7
1
© 2008 Micron Technology, Inc. All rights reserved.
I
DD
-800
1788
Specifications
1428
-667
Units
mA